On March 26, 2012, the Test and Application Center brought in the first ITC57300 dynamic parameter tester in China, which can test dynamic parameters for 2500V IGBT, MOSFET, diode and power transistor, further improving the test ability for test and application center. This device is designed and produced by American ITC company. It is a highly integrated power semiconductor discrete device dynamic parameter tester. It uses a test host, functional test head and personality board test structure. The maximum test current can reach 400A. Different types of packages, the same type and the same package with different parameters of high-precision automatic testing can be realized. It is currently the most advanced and reliable dynamic parameter testing equipment, its test standards meet the US military standard MIL-STD-750E.