R&D New Products with Advanced Technology Leading-edge Technology
Semipower Technology Co.,Ltd.
Our Semiconductor Power Device Test & Application Center is awarded as the provincial key laboratory in Shaanxi province. After certified by CNAS & ILAC, it is recognized as Chinese national Power Device Testing & Application Center.It is Located in Xi 'an GLPI-Park, the key construction project in China’s 12th Five-Year Plan and the most advanced science and technology research & development park in northwest area of China. Our Test & Application Center is consisted of four labs: Power Device Lab, Reliability Lab, System Analysis Lab and Failure Analysis Lab. All our products are tested and verified in our Test & Application Center. As an authorized third party testing organization, we also provide testing and verification service for other units.
Semipower is the first Chinese company which brought in international MOSFET technology. We started cooperation with Fairchild R&D Team in 2003, designed and produced the first MOSFET with independent technology in China. Chinese MOSFET industry started to develop since then. Our Shanghai and Suzhou R&D Center are committed to develop the advanced technologies. The complete product series of Super Junction MOSFET were developed by our Shanghai and Suzhou R&D Center. Our Shenzhen office aims to provide services to customers in southern market, its main business includes sales, projects, quality management and warehouse management. Our Taiwan office was founded in February, 20 ...
Testing items | Coverage products | Detection capability | Reference criteria |
---|---|---|---|
HTRB | MOSFET, IGBT, DIODE, BJT, SCR, 3rd generation semiconductor power devices & MOSFET | Highest temperature: 150℃; Max voltage: 2000V | MIL, GB, JEDEC, IEC, AEC, customized standards |
HTGB | MOSFET, SiC MOSFET | Highest temperature: 150℃; Max voltage: 2000V | MIL, GB, JEDEC, IEC, AEC, customized standards |
HTOL | MOSFET, IGBT, DIODE, BJT, SCR, IC, 3rd generation semiconductor power devices & MOSFET | Highest temperature: 150℃ Max voltage: 2000V | MIL, GB, JEDEC, IEC, AEC, customized standards |
LTOL | MOSFET, IGBT, DIODE, BJT, SCR, IC, 3rd generation semiconductor power devices & MOSFET | Lowest temperature: -80℃ Max voltage: 2000V | MIL, GB, JEDEC, IEC, AEC, customized standards |
HTSL | MOSFET, IGBT, DIODE, BJT, SCR, IC, 3rd generation semiconductor power devices & other electronic products | Highest temperature: 150℃ | MIL, GB, JEDEC, IEC, AEC, customized standards |
LTSL | MOSFET, IGBT, DIODE, BJT, SCR, IC, 3rd generation semiconductor power devices & other electronic products | Lowest temperature: -80℃ | MIL, GB, JEDEC, IEC, AEC, customized standards |
THB | MOSFET、IGBT、DIODE、BJT、SCR、IC、3rd generation semiconductor power devices & other electronic products | Highest temperature: 180℃ Humidity range:10%~98% | MIL, GB, JEDEC, IEC, AEC, customized standards |
TC | MOSFET, IGBT, DIODE, BJT, SCR, IC, 3rd generation semiconductor power devices & other electronic products | Temperature range:-80℃~220℃ | MIL, GB, JEDEC, IEC, AEC, customized standards |
IOL & PC | MOSFET, DIODE, BJT, IGBT,3rd generation semiconductor power devices & MOSFET | ΔTj≧100℃ Max voltage: 48V Max current: 10A | MIL, GB, JEDEC, IEC, AEC, customized standards |
SSOL | MOSFET, DIODE, BJT, IGBT,3rd generation semiconductor power devices & MOSFET | ΔTj≧100℃ Max voltage: 48V Max current: 10A | MIL, GB, JEDEC, IEC, AEC, customized standards |
HAST | MOSFET, DIODE, BJT, IGBT,3rd generation semiconductor power devices & MOSFET | Temperature: 130℃/110℃ Humidity: 85% | MIL, GB, JEDEC, IEC, AEC, customized standards |
UHAST | MOSFET, DIODE, BJT, IGBT,3rd generation semiconductor power devices & MOSFET | Temperature: 130℃ Humidity: 85% | MIL, GB, JEDEC, IEC, AEC, customized standards |
PCT | MOSFET, DIODE, BJT, IGBT,3rd generation semiconductor power devices & MOSFET | Temperature: 121℃ Humidity: 100% | MIL, GB, JEDEC, IEC, AEC, customized standards |
Pre-con | All SMD devices | Our equipments can meet test requirements at all levels | MIL, GB, JEDEC, IEC, AEC, customized standards |
MSL | All SMD devices | Our equipments can meet test requirements at all levels | MIL, GB, JEDEC, IEC, AEC, customized standards |
Solderability | MOSFET、IGBT、DIODE、BJT、SCR、IC、3rd generation semiconductor power devices & MOSFET | Lead & HF test | MIL, GB, JEDEC, IEC, AEC, customized standards |
Testing items | Coverage products | Detection capability | Reference criteria |
---|---|---|---|
DC Parameters | MOSFET, IGBT, DIODE, BJT, SCR,3rd generation semiconductor power devices & MOSFET, IGBT & other modules | Max test voltage:3000V Max test current:1500A | MIL,GB,IEC |
EAS | MOSFET, IGBT,DIODE,3rd generation semiconductor devices & MOSFET | Max test voltage:2500V Max test current:200A | MIL |
Gate Resistance | MOSFET, IGBT, 3rd generation semiconductor devices & MOSFET | Resistance test range:0.1Ω~50Ω | JEDEC |
Td(on/off) | MOSFET, IGBT, DIODE, 3rd generation semiconductor devices & MOSFET | Max test voltage: 1200V Max test current:200A | MIL,GB,IEC |
Td(on/off) | IGBT & other modules | Max test voltage:2700V Max test current:4000A | MIL, GB, IEC |
Reverse Recovery | MOSFET, IGBT, DIODE, 3rd generation semiconductor devices & MOSFET | Max test voltage:1200V Max test current:200A | MIL,GB,IEC |
Reverse Recovery | IGBT & other modules | Max test voltage:2700V Max test current:4000A | MIL,GB,IEC |
Qg | MOSFET、IGBT、DIODE,3rd generation semiconductor devices & MOSFET | Max test voltage:1200V Max test current:200A | MIL,GB,IEC |
Qg | IGBT & other modules | Max test voltage:2700V Max test current:4000A | MIL,GB,IEC |
Short Circuit Tolerance | MOSFET, IGBT, DIODE, 3rd generation semiconductor devices and MOSFET | Max test voltage:1200V Max test current:1000A | MIL,GB,IEC |
Short Circuit Tolerance | IGBT & other modules | Max test voltage:2700V Max test current:10000A | MIL,GB,IEC |
Ciss | MOSFET、IGBT、DIODE,3rd generation semiconductor devices and MOSFET | Max test voltage:3000V | IEC |
Scanned Parameters Curve Graph | MOSFET, IGBT, DIODE, BJT, SCR,I-V & C-V curve graph of 3rd generation semiconductor power devices & MOSFET | Max test voltage:3000V Max test current:1500A Temperature:-70°C~180°C | MIL,IEC |
Heat Resistance Performance | MOSFET、IGBT、DIODE, BJT, SCR,3rd generation semiconductor power devices & MOSFET | Max power:250W | MIL,JEDEC |
Heat Resistance Performance | IGBT & other modules | Max power:4000W | MIL,JEDEC |
ESD Capability | MOSFET、IGBT、IC and etc., | Max voltage of HBM :8000V;Max voltage of MM:800V | MIL,ANSI,JEDEC |
Forward Surge Capability | DIODE(Si/SiC)、bridge rectifier | Max test current:800A | MIL, GB |
Testing items | Coverage products | Detection capability | Reference criteria |
---|---|---|---|
Electric Parameter | Switching power supply (such as low voltage AC/DC power supply,low voltage DC/DC power supply, DC powre module for charging point), motor control board. |
Low voltage AC/DC power supply: single phase max input voltage/power: 300V/3KVA; Max output voltage/power:80V/1000W;Low voltage DC/DC power supply: Max input voltage/power: 80V/1.2KW; Max output voltage/power: 80V/1000W; DC charging point power module: 3 phase max input voltage/power: 500V/30KVA; Max output voltage/power: 700V/30KW; Motor control board: DC input voltage/power: 100V/5KW |
GB,IEC,customer requirements |
Protection Function Test | Switching power supply (such as low voltage AC/DC power supply, low voltage DC/DC power supply,DC power module for charging point ), motor control board. |
Low voltage AC/DC power supply: single phase max input voltage/power: 300V/3KVA; Max output voltage/power: 80V/1000W; Low voltage DC/DC power supply: max input voltage/power: 80V/1.2KW; Max output voltage/power: 80V/1000W; DC charging point power module: 3 phase max output voltage/power: 500V/30KVA; Max output voltage/power: 700V/30KW; E-motor control board: DC input voltage/power: 100V/5KW |
GB,IEC,customer requirements |
Power Device Application Test | Switching Power Supply (such as low voltage AC/DC power supply,low voltage DC/DC power supply,DC power modules for charging point), motor controller, BMS | Max peak voltage: 1.5KV; max real value/peak current:30A/50A; highest temperature:260°C | parameters of power devices,customer requirements |
Electric/Dielectric Strength Test | Electronic & Electrical Products | AC voltage range:(0~5)KV/40mA; DC voltage range:(0~6)KV/9999uA | GB,IEC,customer requirements |
Insulation Resistance Test | Electronic & Electrical Products | (100~1K)Vdc/9999MΩ | GB,IEC,customer requirements |
Ground Resistance Test | Electronic & Electrical Products | 30A/600mΩ | GB,IEC,customer requirements |
Low Temperature Test | Electronic & Electrical Products | Lowest Temperature:-70℃ | GB,IEC,customer requirements |
High Temperature Test | Electronic & Electrical Products | Lowest temperature:~180℃ | GB,IEC, customer requirements |
HALT/HASS | Electronic & Electrical Products | Temperature range:(-100 ~ +200)°C;temperature rising rate:(70°~100°)C/m at average;acceleration: (5 – 60)gRMS (unload) | GB,IEC,customer requirements |
ESD | Electronic & Electrical Products | Contact ESD voltage range:(±2~±8)KV Air ESD voltage range:(±2~±25)KV | GB,IEC,customer requirements |
Surge Immunity Test | Electronic & Electrical Products | Open circute voltage range of 1.2/50us complex wave:(0.25~10)KV;Open circuit voltage range of 10/700us communication wave:(0~6)KV; Output resistance:1.2/50us complex wave: 2Ω, 12Ω & 500Ω;10/700us communication wave: 15Ω & 40Ω | GB, IEC, customer requirements |
Power Terminal Disturbance Voltage / Conduction Test | Electronic & Electrical Products | 9KHz~30MHz | GB,IEC,customer requirements |
Testing items | Coverage products | Detection capability | Reference criteria |
---|---|---|---|
Product Appearance Confirmation | IC,discrete devices, module | Stereo imaging:max 45 times; Optical imaging:max 1000 times | Customer requirements |
Dimensions Measuring | IC,discrete devices, module | Stereo imaging:max 45 times; Optical imaging:max 1000 times | Customer requirements |
SAT | IC,discrete devices, module | Calculate layering area percentage, mark defect dimensions, measure thickness and distance. Conduct A-scan, B-scan, C-scan, and Through-scan | GJB |
X-ray Detection | IC,discrete devices, module | The max resolution ratio is 0.5um. Calculate void area percentage, mark defect dimensions, measure thickness and distance. Conduct 2-D CT scan, 3-D CT scan | GJB |
Push & Pull Force Test | IC,discrete devices, module | WP100 & WP2.5KG pull force testing head,test range: 0-2500g;BS250, BS5KG and DS100KG push force testing head,test range 0-5000g,push broach acceptable area: 0-8891um。 | GJB |
Hazardous Substance Detection | IC,discrete devices, module | Detect Pb, Cd, Hg, Cr6+, PBB, PBDE, halogens and other chemical elements. LOD for Pb/Cd/Hg/Cr/Br can reach to 2ppm. | IEC |
Decap | IC, discrete devices, modules & other products | Chemical decap, sample layer stripping | Customer requirements |
Profile Analysis | IC, discrete devices, modules & other products | Metallography samples fabrication, sample observation, sample dying | Customer requirements |