Semipower Technology Co., Ltd.-Test Center

Test Center introduction

Our Semiconductor Power Device Test & Application Center is awarded as the provincial key laboratory in Shaanxi province. After certified by CNAS & ILAC, it is recognized as Chinese national Power Device Testing & Application Center.It is Located in Xi 'an GLPI-Park, the key construction project in China’s 12th Five-Year Plan and the most advanced science and technology research & development park in northwest area of China. Our Test & Application Center is consisted of four labs: Power Device Lab, Reliability Lab, System Analysis Lab and Failure Analysis Lab. All our products are tested and verified in our Test & Application Center. As an authorized third party testing organization, we also provide testing and verification service for other units.

Semipower is the first Chinese company which brought in international MOSFET technology. We started cooperation with Fairchild R&D Team in 2003, designed and produced the first MOSFET with independent technology in China. Chinese MOSFET industry started to develop since then. Our Shanghai and Suzhou R&D Center are committed to develop the advanced technologies. The complete product series of Super Junction MOSFET were developed by our Shanghai and Suzhou R&D Center. Our Shenzhen office aims to provide services to customers in southern market, its main business includes sales, projects, quality management and warehouse management. Our Taiwan office was founded in February, 20 ...

Test Capability

Reliability Test lab
Device Test Lab
Application System Test Lab
FA Test Lab

Testing items	Coverage products	Detection capability	Reference criteria
HTRB	MOSFET, IGBT, DIODE, BJT, SCR, 3rd generation semiconductor power devices & MOSFET	Highest temperature: 150℃； Max voltage: 2000V	MIL, GB, JEDEC, IEC, AEC, customized standards
HTGB	MOSFET, SiC MOSFET	Highest temperature: 150℃； Max voltage: 2000V	MIL, GB, JEDEC, IEC, AEC, customized standards
HTOL	MOSFET, IGBT, DIODE, BJT, SCR, IC, 3rd generation semiconductor power devices & MOSFET	Highest temperature: 150℃ Max voltage: 2000V	MIL, GB, JEDEC, IEC, AEC, customized standards
LTOL	MOSFET, IGBT, DIODE, BJT, SCR, IC, 3rd generation semiconductor power devices & MOSFET	Lowest temperature: -80℃ Max voltage: 2000V	MIL, GB, JEDEC, IEC, AEC, customized standards
HTSL	MOSFET, IGBT, DIODE, BJT, SCR, IC, 3rd generation semiconductor power devices & other electronic products	Highest temperature: 150℃	MIL, GB, JEDEC, IEC, AEC, customized standards
LTSL	MOSFET, IGBT, DIODE, BJT, SCR, IC, 3rd generation semiconductor power devices & other electronic products	Lowest temperature: -80℃	MIL, GB, JEDEC, IEC, AEC, customized standards
THB	MOSFET、IGBT、DIODE、BJT、SCR、IC、3rd generation semiconductor power devices & other electronic products	Highest temperature: 180℃ Humidity range：10%~98%	MIL, GB, JEDEC, IEC, AEC, customized standards
TC	MOSFET, IGBT, DIODE, BJT, SCR, IC, 3rd generation semiconductor power devices & other electronic products	Temperature range：-80℃~220℃	MIL, GB, JEDEC, IEC, AEC, customized standards
IOL & PC	MOSFET, DIODE, BJT, IGBT,3rd generation semiconductor power devices & MOSFET	ΔTj≧100℃ Max voltage: 48V Max current: 10A	MIL, GB, JEDEC, IEC, AEC, customized standards
SSOL	MOSFET, DIODE, BJT, IGBT,3rd generation semiconductor power devices & MOSFET	ΔTj≧100℃ Max voltage: 48V Max current: 10A	MIL, GB, JEDEC, IEC, AEC, customized standards
HAST	MOSFET, DIODE, BJT, IGBT,3rd generation semiconductor power devices & MOSFET	Temperature: 130℃/110℃ Humidity: 85%	MIL, GB, JEDEC, IEC, AEC, customized standards
UHAST	MOSFET, DIODE, BJT, IGBT,3rd generation semiconductor power devices & MOSFET	Temperature: 130℃ Humidity: 85%	MIL, GB, JEDEC, IEC, AEC, customized standards
PCT	MOSFET, DIODE, BJT, IGBT,3rd generation semiconductor power devices & MOSFET	Temperature: 121℃ Humidity: 100%	MIL, GB, JEDEC, IEC, AEC, customized standards
Pre-con	All SMD devices	Our equipments can meet test requirements at all levels	MIL, GB, JEDEC, IEC, AEC, customized standards
MSL	All SMD devices	Our equipments can meet test requirements at all levels	MIL, GB, JEDEC, IEC, AEC, customized standards
Solderability	MOSFET、IGBT、DIODE、BJT、SCR、IC、3rd generation semiconductor power devices & MOSFET	Lead & HF test	MIL, GB, JEDEC, IEC, AEC, customized standards

Testing items	Coverage products	Detection capability	Reference criteria
DC Parameters	MOSFET, IGBT, DIODE, BJT, SCR，3rd generation semiconductor power devices & MOSFET, IGBT & other modules	Max test voltage：3000V Max test current：1500A	MIL，GB，IEC
EAS	MOSFET, IGBT,DIODE，3rd generation semiconductor devices & MOSFET	Max test voltage：2500V Max test current：200A	MIL
Gate Resistance	MOSFET, IGBT, 3rd generation semiconductor devices & MOSFET	Resistance test range：0.1Ω～50Ω	JEDEC
Td(on/off)	MOSFET, IGBT, DIODE, 3rd generation semiconductor devices & MOSFET	Max test voltage: 1200V Max test current：200A	MIL，GB，IEC
Td(on/off)	IGBT & other modules	Max test voltage：2700V Max test current：4000A	MIL, GB, IEC
Reverse Recovery	MOSFET, IGBT, DIODE, 3rd generation semiconductor devices & MOSFET	Max test voltage：1200V Max test current：200A	MIL，GB，IEC
Reverse Recovery	IGBT & other modules	Max test voltage：2700V Max test current：4000A	MIL，GB，IEC
Qg	MOSFET、IGBT、DIODE，3rd generation semiconductor devices & MOSFET	Max test voltage：1200V Max test current：200A	MIL，GB，IEC
Qg	IGBT & other modules	Max test voltage：2700V Max test current：4000A	MIL，GB，IEC
Short Circuit Tolerance	MOSFET, IGBT, DIODE, 3rd generation semiconductor devices and MOSFET	Max test voltage：1200V Max test current：1000A	MIL，GB，IEC
Short Circuit Tolerance	IGBT & other modules	Max test voltage：2700V Max test current：10000A	MIL，GB，IEC
Ciss	MOSFET、IGBT、DIODE，3rd generation semiconductor devices and MOSFET	Max test voltage：3000V	IEC
Scanned Parameters Curve Graph	MOSFET, IGBT, DIODE, BJT, SCR，I-V & C-V curve graph of 3rd generation semiconductor power devices & MOSFET	Max test voltage：3000V Max test current：1500A Temperature：-70°C~180°C	MIL，IEC
Heat Resistance Performance	MOSFET、IGBT、DIODE, BJT, SCR，3rd generation semiconductor power devices & MOSFET	Max power：250W	MIL，JEDEC
Heat Resistance Performance	IGBT & other modules	Max power：4000W	MIL，JEDEC
ESD Capability	MOSFET、IGBT、IC and etc.,	Max voltage of HBM ：8000V；Max voltage of MM：800V	MIL，ANSI，JEDEC
Forward Surge Capability	DIODE（Si/SiC）、bridge rectifier	Max test current：800A	MIL, GB

Testing items	Coverage products	Detection capability	Reference criteria
Electric Parameter	Switching power supply (such as low voltage AC/DC power supply，low voltage DC/DC power supply, DC powre module for charging point), motor control board.	Low voltage AC/DC power supply: single phase max input voltage/power: 300V/3KVA; Max output voltage/power：80V/1000W；Low voltage DC/DC power supply: Max input voltage/power: 80V/1.2KW; Max output voltage/power: 80V/1000W; DC charging point power module: 3 phase max input voltage/power: 500V/30KVA; Max output voltage/power: 700V/30KW; Motor control board: DC input voltage/power: 100V/5KW	GB，IEC，customer requirements
Protection Function Test	Switching power supply (such as low voltage AC/DC power supply, low voltage DC/DC power supply，DC power module for charging point ), motor control board.	Low voltage AC/DC power supply: single phase max input voltage/power: 300V/3KVA; Max output voltage/power: 80V/1000W; Low voltage DC/DC power supply: max input voltage/power: 80V/1.2KW; Max output voltage/power: 80V/1000W; DC charging point power module: 3 phase max output voltage/power: 500V/30KVA; Max output voltage/power: 700V/30KW; E-motor control board: DC input voltage/power: 100V/5KW	GB，IEC，customer requirements
Power Device Application Test	Switching Power Supply (such as low voltage AC/DC power supply，low voltage DC/DC power supply，DC power modules for charging point), motor controller, BMS	Max peak voltage: 1.5KV; max real value/peak current：30A/50A; highest temperature：260°C	parameters of power devices，customer requirements
Electric/Dielectric Strength Test	Electronic & Electrical Products	AC voltage range：(0~5)KV/40mA； DC voltage range：(0~6)KV/9999uA	GB，IEC，customer requirements
Insulation Resistance Test	Electronic & Electrical Products	(100~1K)Vdc/9999MΩ	GB，IEC，customer requirements
Ground Resistance Test	Electronic & Electrical Products	30A/600mΩ	GB，IEC，customer requirements
Low Temperature Test	Electronic & Electrical Products	Lowest Temperature：-70℃	GB，IEC，customer requirements
High Temperature Test	Electronic & Electrical Products	Lowest temperature：~180℃	GB，IEC, customer requirements
HALT/HASS	Electronic & Electrical Products	Temperature range：（-100 ～ +200）°C；temperature rising rate：（70°～100°）C/m at average；acceleration: （5 – 60）gRMS (unload)	GB，IEC，customer requirements
ESD	Electronic & Electrical Products	Contact ESD voltage range：(±2～±8)KV Air ESD voltage range：(±2～±25)KV	GB，IEC，customer requirements
Surge Immunity Test	Electronic & Electrical Products	Open circute voltage range of 1.2/50us complex wave：(0.25～10)KV；Open circuit voltage range of 10/700us communication wave：(0～6)KV； Output resistance：1.2/50us complex wave: 2Ω, 12Ω & 500Ω；10/700us communication wave: 15Ω & 40Ω	GB, IEC, customer requirements
Power Terminal Disturbance Voltage / Conduction Test	Electronic & Electrical Products	9KHz～30MHz	GB，IEC，customer requirements

Testing items	Coverage products	Detection capability	Reference criteria
Product Appearance Confirmation	IC，discrete devices, module	Stereo imaging：max 45 times； Optical imaging：max 1000 times	Customer requirements
Dimensions Measuring	IC，discrete devices, module	Stereo imaging：max 45 times； Optical imaging：max 1000 times	Customer requirements
SAT	IC，discrete devices, module	Calculate layering area percentage, mark defect dimensions, measure thickness and distance. Conduct A-scan, B-scan, C-scan, and Through-scan	GJB
X-ray Detection	IC，discrete devices, module	The max resolution ratio is 0.5um. Calculate void area percentage, mark defect dimensions, measure thickness and distance. Conduct 2-D CT scan, 3-D CT scan	GJB
Push & Pull Force Test	IC，discrete devices, module	WP100 & WP2.5KG pull force testing head，test range: 0-2500g；BS250, BS5KG and DS100KG push force testing head，test range 0-5000g，push broach acceptable area: 0-8891um。	GJB
Hazardous Substance Detection	IC，discrete devices, module	Detect Pb, Cd, Hg, Cr6+, PBB, PBDE, halogens and other chemical elements. LOD for Pb/Cd/Hg/Cr/Br can reach to 2ppm.	IEC
Decap	IC, discrete devices, modules & other products	Chemical decap, sample layer stripping	Customer requirements
Profile Analysis	IC, discrete devices, modules & other products	Metallography samples fabrication, sample observation, sample dying	Customer requirements

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