R&D New Products with Advanced Technology Leading-edge Technology
Semipower Technology Co.,Ltd.
Testing items | Coverage products | Detection capability | Reference criteria |
---|---|---|---|
HTRB | MOSFET, IGBT, DIODE, BJT, SCR, 3rd generation semiconductor power devices & MOSFET | Highest temperature: 150℃; Max voltage: 2000V | MIL, GB, JEDEC, IEC, AEC, customized standards |
HTGB | MOSFET, SiC MOSFET | Highest temperature: 150℃; Max voltage: 2000V | MIL, GB, JEDEC, IEC, AEC, customized standards |
HTOL | MOSFET, IGBT, DIODE, BJT, SCR, IC, 3rd generation semiconductor power devices & MOSFET | Highest temperature: 150℃ Max voltage: 2000V | MIL, GB, JEDEC, IEC, AEC, customized standards |
LTOL | MOSFET, IGBT, DIODE, BJT, SCR, IC, 3rd generation semiconductor power devices & MOSFET | Lowest temperature: -80℃ Max voltage: 2000V | MIL, GB, JEDEC, IEC, AEC, customized standards |
HTSL | MOSFET, IGBT, DIODE, BJT, SCR, IC, 3rd generation semiconductor power devices & other electronic products | Highest temperature: 150℃ | MIL, GB, JEDEC, IEC, AEC, customized standards |
LTSL | MOSFET, IGBT, DIODE, BJT, SCR, IC, 3rd generation semiconductor power devices & other electronic products | Lowest temperature: -80℃ | MIL, GB, JEDEC, IEC, AEC, customized standards |
THB | MOSFET、IGBT、DIODE、BJT、SCR、IC、3rd generation semiconductor power devices & other electronic products | Highest temperature: 180℃ Humidity range:10%~98% | MIL, GB, JEDEC, IEC, AEC, customized standards |
TC | MOSFET, IGBT, DIODE, BJT, SCR, IC, 3rd generation semiconductor power devices & other electronic products | Temperature range:-80℃~220℃ | MIL, GB, JEDEC, IEC, AEC, customized standards |
IOL & PC | MOSFET, DIODE, BJT, IGBT,3rd generation semiconductor power devices & MOSFET | ΔTj≧100℃ Max voltage: 48V Max current: 10A | MIL, GB, JEDEC, IEC, AEC, customized standards |
SSOL | MOSFET, DIODE, BJT, IGBT,3rd generation semiconductor power devices & MOSFET | ΔTj≧100℃ Max voltage: 48V Max current: 10A | MIL, GB, JEDEC, IEC, AEC, customized standards |
HAST | MOSFET, DIODE, BJT, IGBT,3rd generation semiconductor power devices & MOSFET | Temperature: 130℃/110℃ Humidity: 85% | MIL, GB, JEDEC, IEC, AEC, customized standards |
UHAST | MOSFET, DIODE, BJT, IGBT,3rd generation semiconductor power devices & MOSFET | Temperature: 130℃ Humidity: 85% | MIL, GB, JEDEC, IEC, AEC, customized standards |
PCT | MOSFET, DIODE, BJT, IGBT,3rd generation semiconductor power devices & MOSFET | Temperature: 121℃ Humidity: 100% | MIL, GB, JEDEC, IEC, AEC, customized standards |
Pre-con | All SMD devices | Our equipments can meet test requirements at all levels | MIL, GB, JEDEC, IEC, AEC, customized standards |
MSL | All SMD devices | Our equipments can meet test requirements at all levels | MIL, GB, JEDEC, IEC, AEC, customized standards |
Solderability | MOSFET、IGBT、DIODE、BJT、SCR、IC、3rd generation semiconductor power devices & MOSFET | Lead & HF test | MIL, GB, JEDEC, IEC, AEC, customized standards |
Testing items | Coverage products | Detection capability | Reference criteria |
---|---|---|---|
DC Parameters | MOSFET, IGBT, DIODE, BJT, SCR,3rd generation semiconductor power devices & MOSFET, IGBT & other modules | Max test voltage:3000V Max test current:1500A | MIL,GB,IEC |
EAS | MOSFET, IGBT,DIODE,3rd generation semiconductor devices & MOSFET | Max test voltage:2500V Max test current:200A | MIL |
Gate Resistance | MOSFET, IGBT, 3rd generation semiconductor devices & MOSFET | Resistance test range:0.1Ω~50Ω | JEDEC |
Td(on/off) | MOSFET, IGBT, DIODE, 3rd generation semiconductor devices & MOSFET | Max test voltage: 1200V Max test current:200A | MIL,GB,IEC |
Td(on/off) | IGBT & other modules | Max test voltage:2700V Max test current:4000A | MIL, GB, IEC |
Reverse Recovery | MOSFET, IGBT, DIODE, 3rd generation semiconductor devices & MOSFET | Max test voltage:1200V Max test current:200A | MIL,GB,IEC |
Reverse Recovery | IGBT & other modules | Max test voltage:2700V Max test current:4000A | MIL,GB,IEC |
Qg | MOSFET、IGBT、DIODE,3rd generation semiconductor devices & MOSFET | Max test voltage:1200V Max test current:200A | MIL,GB,IEC |
Qg | IGBT & other modules | Max test voltage:2700V Max test current:4000A | MIL,GB,IEC |
Short Circuit Tolerance | MOSFET, IGBT, DIODE, 3rd generation semiconductor devices and MOSFET | Max test voltage:1200V Max test current:1000A | MIL,GB,IEC |
Short Circuit Tolerance | IGBT & other modules | Max test voltage:2700V Max test current:10000A | MIL,GB,IEC |
Ciss | MOSFET、IGBT、DIODE,3rd generation semiconductor devices and MOSFET | Max test voltage:3000V | IEC |
Scanned Parameters Curve Graph | MOSFET, IGBT, DIODE, BJT, SCR,I-V & C-V curve graph of 3rd generation semiconductor power devices & MOSFET | Max test voltage:3000V Max test current:1500A Temperature:-70°C~180°C | MIL,IEC |
Heat Resistance Performance | MOSFET、IGBT、DIODE, BJT, SCR,3rd generation semiconductor power devices & MOSFET | Max power:250W | MIL,JEDEC |
Heat Resistance Performance | IGBT & other modules | Max power:4000W | MIL,JEDEC |
ESD Capability | MOSFET、IGBT、IC and etc., | Max voltage of HBM :8000V;Max voltage of MM:800V | MIL,ANSI,JEDEC |
Forward Surge Capability | DIODE(Si/SiC)、bridge rectifier | Max test current:800A | MIL, GB |
Testing items | Coverage products | Detection capability | Reference criteria |
---|---|---|---|
Electric Parameter | Switching power supply (such as low voltage AC/DC power supply,low voltage DC/DC power supply, DC powre module for charging point), motor control board. |
Low voltage AC/DC power supply: single phase max input voltage/power: 300V/3KVA; Max output voltage/power:80V/1000W;Low voltage DC/DC power supply: Max input voltage/power: 80V/1.2KW; Max output voltage/power: 80V/1000W; DC charging point power module: 3 phase max input voltage/power: 500V/30KVA; Max output voltage/power: 700V/30KW; Motor control board: DC input voltage/power: 100V/5KW |
GB,IEC,customer requirements |
Protection Function Test | Switching power supply (such as low voltage AC/DC power supply, low voltage DC/DC power supply,DC power module for charging point ), motor control board. |
Low voltage AC/DC power supply: single phase max input voltage/power: 300V/3KVA; Max output voltage/power: 80V/1000W; Low voltage DC/DC power supply: max input voltage/power: 80V/1.2KW; Max output voltage/power: 80V/1000W; DC charging point power module: 3 phase max output voltage/power: 500V/30KVA; Max output voltage/power: 700V/30KW; E-motor control board: DC input voltage/power: 100V/5KW |
GB,IEC,customer requirements |
Power Device Application Test | Switching Power Supply (such as low voltage AC/DC power supply,low voltage DC/DC power supply,DC power modules for charging point), motor controller, BMS | Max peak voltage: 1.5KV; max real value/peak current:30A/50A; highest temperature:260°C | parameters of power devices,customer requirements |
Electric/Dielectric Strength Test | Electronic & Electrical Products | AC voltage range:(0~5)KV/40mA; DC voltage range:(0~6)KV/9999uA | GB,IEC,customer requirements |
Insulation Resistance Test | Electronic & Electrical Products | (100~1K)Vdc/9999MΩ | GB,IEC,customer requirements |
Ground Resistance Test | Electronic & Electrical Products | 30A/600mΩ | GB,IEC,customer requirements |
Low Temperature Test | Electronic & Electrical Products | Lowest Temperature:-70℃ | GB,IEC,customer requirements |
High Temperature Test | Electronic & Electrical Products | Lowest temperature:~180℃ | GB,IEC, customer requirements |
HALT/HASS | Electronic & Electrical Products | Temperature range:(-100 ~ +200)°C;temperature rising rate:(70°~100°)C/m at average;acceleration: (5 – 60)gRMS (unload) | GB,IEC,customer requirements |
ESD | Electronic & Electrical Products | Contact ESD voltage range:(±2~±8)KV Air ESD voltage range:(±2~±25)KV | GB,IEC,customer requirements |
Surge Immunity Test | Electronic & Electrical Products | Open circute voltage range of 1.2/50us complex wave:(0.25~10)KV;Open circuit voltage range of 10/700us communication wave:(0~6)KV; Output resistance:1.2/50us complex wave: 2Ω, 12Ω & 500Ω;10/700us communication wave: 15Ω & 40Ω | GB, IEC, customer requirements |
Power Terminal Disturbance Voltage / Conduction Test | Electronic & Electrical Products | 9KHz~30MHz | GB,IEC,customer requirements |
Testing items | Coverage products | Detection capability | Reference criteria |
---|---|---|---|
Product Appearance Confirmation | IC,discrete devices, module | Stereo imaging:max 45 times; Optical imaging:max 1000 times | Customer requirements |
Dimensions Measuring | IC,discrete devices, module | Stereo imaging:max 45 times; Optical imaging:max 1000 times | Customer requirements |
SAT | IC,discrete devices, module | Calculate layering area percentage, mark defect dimensions, measure thickness and distance. Conduct A-scan, B-scan, C-scan, and Through-scan | GJB |
X-ray Detection | IC,discrete devices, module | The max resolution ratio is 0.5um. Calculate void area percentage, mark defect dimensions, measure thickness and distance. Conduct 2-D CT scan, 3-D CT scan | GJB |
Push & Pull Force Test | IC,discrete devices, module | WP100 & WP2.5KG pull force testing head,test range: 0-2500g;BS250, BS5KG and DS100KG push force testing head,test range 0-5000g,push broach acceptable area: 0-8891um。 | GJB |
Hazardous Substance Detection | IC,discrete devices, module | Detect Pb, Cd, Hg, Cr6+, PBB, PBDE, halogens and other chemical elements. LOD for Pb/Cd/Hg/Cr/Br can reach to 2ppm. | IEC |
Decap | IC, discrete devices, modules & other products | Chemical decap, sample layer stripping | Customer requirements |
Profile Analysis | IC, discrete devices, modules & other products | Metallography samples fabrication, sample observation, sample dying | Customer requirements |