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A high-tech enterprise integrating R & D, production and sales

R&D New Products with Advanced Technology Leading-edge Technology

Semipower Electronic Technology Co.,Ltd

+86 29-88251977

Xi'an Semipower Electronic Technology Company-Testing ability
Test CapabilityTest Capability
  • Reliability Testing Room
  • Component Testing Room
  • Application System Test Room
  • Failure Analysis Test Room
Testing items Coverage products Detection capability Reference criteria
HTRB MOSFET, IGBT, DIODE, BJT, SCR, 3rd generation semiconductor power devices & MOSFET Highest temperature: 150℃; Max voltage: 2000V MIL, GB, JEDEC, IEC, AEC, customized standards
HTGB MOSFET, SiC MOSFET Highest temperature: 150℃; Max voltage: 2000V MIL, GB, JEDEC, IEC, AEC, customized standards
HTOL MOSFET, IGBT, DIODE, BJT, SCR, IC, 3rd generation semiconductor power devices & MOSFET Highest temperature: 150℃ Max voltage: 2000V MIL, GB, JEDEC, IEC, AEC, customized standards
LTOL MOSFET, IGBT, DIODE, BJT, SCR, IC, 3rd generation semiconductor power devices & MOSFET Lowest temperature: -80℃ Max voltage: 2000V MIL, GB, JEDEC, IEC, AEC, customized standards
HTSL MOSFET, IGBT, DIODE, BJT, SCR, IC, 3rd generation semiconductor power devices & other electronic products Highest temperature: 150℃ MIL, GB, JEDEC, IEC, AEC, customized standards
LTSL MOSFET, IGBT, DIODE, BJT, SCR, IC, 3rd generation semiconductor power devices & other electronic products Lowest temperature: -80℃ MIL, GB, JEDEC, IEC, AEC, customized standards
THB MOSFET、IGBT、DIODE、BJT、SCR、IC、3rd generation semiconductor power devices & other electronic products Highest temperature: 180℃ Humidity range:10%~98% MIL, GB, JEDEC, IEC, AEC, customized standards
TC MOSFET, IGBT, DIODE, BJT, SCR, IC, 3rd generation semiconductor power devices & other electronic products Temperature range:-80℃~220℃ MIL, GB, JEDEC, IEC, AEC, customized standards
IOL & PC MOSFET, DIODE, BJT, IGBT,3rd generation semiconductor power devices & MOSFET ΔTj≧100℃ Max voltage: 48V Max current: 10A MIL, GB, JEDEC, IEC, AEC, customized standards
SSOL MOSFET, DIODE, BJT, IGBT,3rd generation semiconductor power devices & MOSFET ΔTj≧100℃ Max voltage: 48V Max current: 10A MIL, GB, JEDEC, IEC, AEC, customized standards
HAST MOSFET, DIODE, BJT, IGBT,3rd generation semiconductor power devices & MOSFET Temperature: 130℃/110℃ Humidity: 85% MIL, GB, JEDEC, IEC, AEC, customized standards
UHAST MOSFET, DIODE, BJT, IGBT,3rd generation semiconductor power devices & MOSFET Temperature: 130℃ Humidity: 85% MIL, GB, JEDEC, IEC, AEC, customized standards
PCT MOSFET, DIODE, BJT, IGBT,3rd generation semiconductor power devices & MOSFET Temperature: 121℃ Humidity: 100% MIL, GB, JEDEC, IEC, AEC, customized standards
Pre-con All SMD devices Our equipments can meet test requirements at all levels MIL, GB, JEDEC, IEC, AEC, customized standards
MSL All SMD devices Our equipments can meet test requirements at all levels MIL, GB, JEDEC, IEC, AEC, customized standards
Solderability MOSFET、IGBT、DIODE、BJT、SCR、IC、3rd generation semiconductor power devices & MOSFET Lead & HF test MIL, GB, JEDEC, IEC, AEC, customized standards
Testing items Coverage products Detection capability Reference criteria
DC Parameters MOSFET, IGBT, DIODE, BJT, SCR,3rd generation semiconductor power devices & MOSFET, IGBT & other modules Max test voltage:3000V Max test current:1500A MIL,GB,IEC
EAS MOSFET, IGBT,DIODE,3rd generation semiconductor devices & MOSFET Max test voltage:2500V Max test current:200A MIL
Gate Resistance MOSFET, IGBT, 3rd generation semiconductor devices & MOSFET Resistance test range:0.1Ω~50Ω JEDEC
Td(on/off) MOSFET, IGBT, DIODE, 3rd generation semiconductor devices & MOSFET Max test voltage: 1200V Max test current:200A MIL,GB,IEC
Td(on/off) IGBT & other modules Max test voltage:2700V Max test current:4000A MIL, GB, IEC
Reverse Recovery MOSFET, IGBT, DIODE, 3rd generation semiconductor devices & MOSFET Max test voltage:1200V Max test current:200A MIL,GB,IEC
Reverse Recovery IGBT & other modules Max test voltage:2700V Max test current:4000A MIL,GB,IEC
Qg MOSFET、IGBT、DIODE,3rd generation semiconductor devices & MOSFET Max test voltage:1200V Max test current:200A MIL,GB,IEC
Qg IGBT & other modules Max test voltage:2700V Max test current:4000A MIL,GB,IEC
Short Circuit Tolerance MOSFET, IGBT, DIODE, 3rd generation semiconductor devices and MOSFET Max test voltage:1200V Max test current:1000A MIL,GB,IEC
Short Circuit Tolerance IGBT & other modules Max test voltage:2700V Max test current:10000A MIL,GB,IEC
Ciss MOSFET、IGBT、DIODE,3rd generation semiconductor devices and MOSFET Max test voltage:3000V IEC
Scanned Parameters Curve Graph MOSFET, IGBT, DIODE, BJT, SCR,I-V & C-V curve graph of 3rd generation semiconductor power devices & MOSFET Max test voltage:3000V Max test current:1500A Temperature:-70°C~180°C MIL,IEC
Heat Resistance Performance MOSFET、IGBT、DIODE, BJT, SCR,3rd generation semiconductor power devices & MOSFET Max power:250W MIL,JEDEC
Heat Resistance Performance IGBT & other modules Max power:4000W MIL,JEDEC
ESD Capability MOSFET、IGBT、IC and etc., Max voltage of HBM :8000V;Max voltage of MM:800V MIL,ANSI,JEDEC
Forward Surge Capability DIODE(Si/SiC)、bridge rectifier Max test current:800A MIL, GB
Testing items Coverage products Detection capability Reference criteria
Electric Parameter Switching power supply (such as low voltage AC/DC power supply,low voltage DC/DC power supply, DC powre module for charging point), motor control board.

Low voltage AC/DC power supply: single phase max input voltage/power: 300V/3KVA; Max output voltage/power:80V/1000W;Low voltage DC/DC power supply: Max input voltage/power: 80V/1.2KW; Max output voltage/power: 80V/1000W; DC charging point power module: 3 phase max input voltage/power: 500V/30KVA; Max output voltage/power: 700V/30KW; Motor control board: DC input voltage/power: 100V/5KW


GB,IEC,customer requirements 
Protection Function Test Switching power supply (such as low voltage AC/DC power supply, low voltage DC/DC power supply,DC power module for charging point ), motor control board.

Low voltage AC/DC power supply: single phase max input voltage/power: 300V/3KVA; Max output voltage/power: 80V/1000W; Low voltage DC/DC power supply: max input voltage/power: 80V/1.2KW; Max output voltage/power: 80V/1000W;

DC charging point power module: 3 phase max output voltage/power: 500V/30KVA; Max output voltage/power: 700V/30KW; E-motor control board: DC input voltage/power: 100V/5KW

GB,IEC,customer requirements
Power Device Application Test Switching Power Supply (such as low voltage AC/DC power supply,low voltage DC/DC power supply,DC power modules for charging point), motor controller, BMS Max peak voltage: 1.5KV; max real value/peak current:30A/50A; highest temperature:260°C parameters of power devices,customer requirements
Electric/Dielectric Strength Test Electronic & Electrical Products AC voltage range:(0~5)KV/40mA; DC voltage range:(0~6)KV/9999uA GB,IEC,customer requirements
Insulation Resistance Test Electronic & Electrical Products (100~1K)Vdc/9999MΩ GB,IEC,customer requirements
Ground Resistance Test Electronic & Electrical Products 30A/600mΩ GB,IEC,customer requirements
Low Temperature Test Electronic & Electrical Products Lowest Temperature:-70℃ GB,IEC,customer requirements
High Temperature Test Electronic & Electrical Products Lowest temperature:~180℃ GB,IEC, customer requirements
HALT/HASS Electronic & Electrical Products Temperature range:(-100 ~ +200)°C;temperature rising rate:(70°~100°)C/m at average;acceleration: (5 – 60)gRMS (unload) GB,IEC,customer requirements
ESD Electronic & Electrical Products Contact ESD voltage range:(±2~±8)KV Air ESD voltage range:(±2~±25)KV GB,IEC,customer requirements
Surge Immunity Test Electronic & Electrical Products Open circute voltage range of 1.2/50us complex wave:(0.25~10)KV;Open circuit voltage range of 10/700us communication wave:(0~6)KV; Output resistance:1.2/50us complex wave: 2Ω, 12Ω & 500Ω;10/700us communication wave: 15Ω & 40Ω GB, IEC, customer requirements
Power Terminal Disturbance Voltage / Conduction Test Electronic & Electrical Products 9KHz~30MHz GB,IEC,customer requirements
Testing items Coverage products Detection capability Reference criteria
Product Appearance Confirmation IC,discrete devices, module Stereo imaging:max 45 times; Optical imaging:max 1000 times Customer requirements
Dimensions Measuring IC,discrete devices, module Stereo imaging:max 45 times; Optical imaging:max 1000 times Customer requirements
SAT IC,discrete devices, module Calculate layering area percentage, mark defect dimensions, measure thickness and distance. Conduct A-scan, B-scan, C-scan, and Through-scan GJB
X-ray Detection IC,discrete devices, module The max resolution ratio is 0.5um. Calculate void area percentage, mark defect dimensions, measure thickness and distance. Conduct 2-D CT scan, 3-D CT scan GJB
Push & Pull Force Test IC,discrete devices, module WP100 & WP2.5KG pull force testing head,test range: 0-2500g;BS250, BS5KG and DS100KG push force testing head,test range 0-5000g,push broach acceptable area: 0-8891um。 GJB
Hazardous Substance Detection IC,discrete devices, module Detect Pb, Cd, Hg, Cr6+, PBB, PBDE, halogens and other chemical elements. LOD for Pb/Cd/Hg/Cr/Br can reach to 2ppm. IEC
Decap IC, discrete devices, modules & other products Chemical decap, sample layer stripping Customer requirements
Profile Analysis IC, discrete devices, modules & other products Metallography samples fabrication, sample observation, sample dying Customer requirements