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  • P-Channel Trench Mosfet (8v-200v) P-Channel Trench Mosfet (8v-200v) P-Channel Trench MOSFET adopts advanced process manufacturing technology, better process conditions, and finely optimized device structure to continuously optimize product on-resistance, switching characteristics, reliability, etc., and continues to promote product iteration, with a rich product series, industry-leading Its parameter performance and excellent reliability have become industry benchmarks. Products are widely used in various fields such as motor drives, battery management systems, load switches, communications, and consumer electronics. At the same time, a variety of package shapes are provided for customers to choose from.
  • Schottky Diode Schottky Diode
  • EV30 LOW-VOLTAGE MOTOR CONTROLLER EV30 LOW-VOLTAGE MOTOR CONTROLLER The EV30 Series Electric Vehicle Controller is a low-voltage motor controller developed using MOSFET parallel technology and motor FOC vector control technology. It offers high control precision, fast torque response, smooth start-up, and strong climbing power. It meets high-performance control requirements for both permanent magnet synchronous motors and asynchronous AC motors. Features: Supports automotive-specific functions such as regenerative braking, anti-rollback, cruise control, and reverse speed limit. Provides comprehensive protection functions including overheat, overvoltage, undervoltage, overcurrent, short circuit, overspeed, communication failure, position signal failure, temperature detection signal failure, and control power undervoltage. Supports control for both asynchronous motors and permanent magnet synchronous motors...
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  • Semipower Test Application Center Semipower Test Application Center Xi'an CorePac Power Device Testing Application Center is a key laboratory in Shaanxi Province, and is also the most complete testing center for power device testing in China. The center was accred...
  • GBU20005~GBU2010 GBU20005~GBU2010 FEATURESPolarity: As marked on bodySurge overload rating -240 amperes peakIdeal for printed circuit boardReliable low cost construction utilizing molded plastic techniquePlastic material has U/LThe fl...
  • S2ABF~S2MBF S2ABF~S2MBF FEATURESFor surface mounted applicationsLow profile packageGlass Passivated Chip JunctionEasy to pick and placeLead free in comply with EU RoHS 2011/65/EU directivesMECHANICAL DATACase: SMBFTerminals:...
  • US2ABF~US2MBF US2ABF~US2MBF FEATURESFor surface mounted applicationsLow profile packageGlass Passivated Chip JunctionEasy to pick and placeHigh efficiencyLead free in comply with EU RoHS 2011/65/EU directivesMECHANICAL DATACase:...
  • RS2AF~RS2MF RS2AF~RS2MF FEATURESFor surface mounted applicationsLow profile packageGlass Passivated Chip JunctionEasy to pick and placeFast reverse recovery timeLead free in comply with EU RoHS 2011/65/EU directivesMECHANICA...
  • ES2AF~ES2JF ES2AF~ES2JF FEATURESFor surface mounted applicationsLow profile packageGlass Passivated Chip JunctionSuperfast reverse recovery timeLead free in comply with EU RoHS 2011/65/EU directivesMECHANICAL DATACase: SMAFT...
  • MM1Z2V0~MM1Z75 MM1Z2V0~MM1Z75 FEATURESTotal power dissipation: Max. 500mW.VVide zener reverse voltage range 2.0V to 75V.Small plastic package suitable for surface mounted design.Tolerance approximately+5%MECHANICAL DATACase: SOD-1...
  • P4SMAFJ Series P4SMAFJ Series FEATURESFor surface mounted applications in order to optimize board space.Low profile packageGlass passivated junctionLow inductancePlastic package has Underwriters Laboratory FlammabilityMECHANICAL D...
  • SW028R02VLT SW028R02VLT FeaturesHigh ruggednessLow RDS(ON) (Typ 3.5mΩ)@VGS=2.5V (Typ 2.9mΩ)@VGS=4.5V (Typ 2.7mΩ)@VGS=10VLow Gate Charge (Typ 107nC)Improved dv/dt Capability100% ...
  • SW028P04 SW028P04 FeaturesHigh ruggednessLow RDS(ON) (Typ 23mΩ)@VGS=-4.5V (Typ 19mΩ)@VGS=-10VLow Gate Charge (Typ 48nC)Improved dv/dt Capability100% Avalanche TestedApplication: DC-DC Converter, ...
  • SW630D SW630D General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
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