Semipower Metal Oxide Semiconductor Fet MOSFET

Semipower Technology, a leading MOSFET manufacturer, ensures exceptional product performance and reliability through its advanced technology and stringent quality management, simplifying system design while offering cost-effective solutions. Semipower technology combined with advanced lightweight and compact packaging further improves the power density and energy conversion efficiency of the system. Our metal oxide semiconductor fet MOSFET has optimized high current shutdown capability and electrostatic protection capability, which meets a wide range of applications including DC motor drive, lithium battery protection, AC/DC synchronous rectification, etc.

Types of Metal Oxide Semiconductor FET MOSFET Bulk for Sale

N-Channel SGT MOSFET (25V-250V)

Product features of N-Channel SGT MOSFET: On-resistance is reduced by more than 20%, ESD capability, high current shutdown capability, and short-circuit capability are increased by more than 10%. It also has better EMI characteristics, which can meet customers' higher energy efficiency and higher reliability. demand, product performance and competitiveness have been further improved.
N-Channel Trench Mosfet (8v-200v)

N-Channel Trench MOSFET ensures excellent product performance and reliability with its technical level and excellent quality management, reducing the difficulty of system design while providing cost-effectiveness. Widely used in switching power supplies, DC motor control, solar micro-inverters, telecommunications and server power supplies, and uninterruptible power supplies (UPS).
P-Channel Trench Mosfet (8v-200v)

P-Channel Trench MOSFET adopts advanced process manufacturing technology, better process conditions, and finely optimized device structure to continuously optimize product on-resistance, switching characteristics, reliability, etc., and continues to promote product iteration, with a rich product series, industry-leading Its parameter performance and excellent reliability have become industry benchmarks. Products are widely used in various fields such as motor drives, battery management systems, load switches, communications, and consumer electronics. At the same time, a variety of package shapes are provided for customers to choose from.
N-Channel Planar MOSFET (200v-1000v)

SEMIPOWER TECHNOLOGY: By adopting the most advanced process and layout structure, Planar MOSFET power density is maximized, which significantly reduces the conduction loss in the current conduction process. At the same time, the current flow in the chip cell will be more uniform and stable; for high-frequency switching applications, it effectively reduces the gate charge (Qg), especially the gate-drain charge (Qgd), thus reducing the switching power loss during fast switching. By adopting these advanced technological means, the MOSFET's FOM (Quality Factor (Qg*Rdson)) has been able to achieve an industry-leading level.
N-Channel Superjunction MOSFET (500v-900v)

SEMIPOWER TECHNOLOGY products: the use of advanced charge balance technology, the new launch of the third generation of superjunction MOSFET series of products, in the first generation of the second generation of superjunction MOSFET products on the basis of a substantial increase in the current density per unit area, while improving the device in the system EMI characteristics, the product features on-resistance (Rdson*A) reduced by 25% lower switching losses, 15% lower switching losses, and 1.5% higher total energy efficiency. We offer circuit designers a wide range of voltage-current options from 500V-900V and 2A-65A.

Metal Oxide Semiconductor Fet MOSFET Quality Control

As the first MOSFET company in China, also the first company entering the field of power management IC design, Semipower Technology adopts the internationally accepted FABLESS operation model and effectively utilizes wafer foundry and packaging foundry resources. Through years of assessment and practical experience, the company remains at the forefront of innovation. Its Daoda factory fosters deep collaboration and created a first-class design-production-processing-testing system in China. All partners are well-known semiconductor companies at home and abroad, and have obtained ISO9001, TS16949, ISO14001 and other quality and environmental certifications. Samwin Tech's continuous requirements for quality have also become the driving force for the continuous improvement of quality in all foundries. At the same time, we firmly believe that customer recognition is the final judgment on the quality of Samwin metal oxide semiconductor field effect transistor MOSFET.

Metal Oxide Semiconductor Fet MOSFET Working Principle

MOS tube principle of operation (N-channel enhancement MOS field effect tube) involves the use of VCS to control the “inductive charge” how much to change the “inductive charge” formed by the conductive channel condition, and then achieve the purpose of controlling the drain current. In the manufacture of MOSFET components, the insulating layer through the process of a large number of positive ions, so in the other side of the interface can be induced more negative charges, these negative charges to the high permeability impurities in the N region connected to the formation of a conductive channel, even in the VGS=0, there is a large leakage current ID. As the gate voltage changes, the amount of induced charge in the channel also changes, altering the conductive channel width. Consequently, the leakage current Tn varies with the gate voltage, affecting the drain current.

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Semipower Metal Oxide Semiconductor Fet MOSFET

Types of Metal Oxide Semiconductor FET MOSFET Bulk for Sale

N-Channel SGT MOSFET (25V-250V)

N-Channel Trench Mosfet (8v-200v)

P-Channel Trench Mosfet (8v-200v)

N-Channel Planar MOSFET (200v-1000v)

N-Channel Superjunction MOSFET (500v-900v)

Metal Oxide Semiconductor Fet MOSFET Quality Control

Metal Oxide Semiconductor Fet MOSFET Working Principle