Semipower Metal Oxide Semiconductor Fet MOSFET

Semipower Technology ensures excellent product performance and reliability with its technical level and excellent quality management, reducing the difficulty of system design while providing cost-effectiveness. Semipower technology combined with advanced lightweight and compact packaging further improves the power density and energy conversion efficiency of the system. It has optimized high current shutdown capability and electrostatic protection capability, and can meet a wide range of applications including DC motor drive, lithium battery protection, AC/DC synchronous rectification, etc.

Types of MOSFET

N-Channel SGT MOSFET (25V-250V)

Product features of N-Channel SGT MOSFET: On-resistance is reduced by more than 20%, ESD capability, high current shutdown capability, and short-circuit capability are increased by more than 10%. It also has better EMI characteristics, which can meet customers' higher energy efficiency and higher reliability. demand, product performance and competitiveness have been further improved.
N-Channel Trench Mosfet (8v-200v)

N-Channel Trench MOSFET ensures excellent product performance and reliability with its technical level and excellent quality management, reducing the difficulty of system design while providing cost-effectiveness. Widely used in switching power supplies, DC motor control, solar micro-inverters, telecommunications and server power supplies, and uninterruptible power supplies (UPS).
P-Channel Trench Mosfet (8v-200v)

P-Channel Trench MOSFET adopts advanced process manufacturing technology, better process conditions, and finely optimized device structure to continuously optimize product on-resistance, switching characteristics, reliability, etc., and continues to promote product iteration, with a rich product series, industry-leading Its parameter performance and excellent reliability have become industry benchmarks. Products are widely used in various fields such as motor drives, battery management systems, load switches, communications, and consumer electronics. At the same time, a variety of package shapes are provided for customers to choose from.
N-Channel Planar MOSFET (200v-1000v)

SEMIPOWER TECHNOLOGY: By adopting the most advanced process and layout structure, Planar MOSFET power density is maximized, which significantly reduces the conduction loss in the current conduction pr...
N-Channel Superjunction MOSFET (500v-900v)

SEMIPOWER TECHNOLOGY products: the use of advanced charge balance technology, the new launch of the third generation of superjunction MOSFET series of products, in the first generation of the second g...

Metal Oxide Semiconductor Fet MOSFET Quality Control

As the first company in China to enter the field of MOSFET and power management IC design, Semipower Technology adopts the internationally accepted FABLESS operation model and effectively utilizes wafer foundry and packaging foundry resources. Through years of assessment and practice, it continues to keep up with the frontline and the next. The Daoda factory has in-depth cooperation and created a first-class design-production-processing-testing system in China. All partners are well-known conductor companies at home and abroad, and have obtained ISO9001, TS16949, ISO14001 and other quality and environmental certifications. Samwin Tech's continuous requirements for quality have also become the driving force for the continuous improvement of quality in all foundries. At the same time, we firmly believe that customer recognition is the final judgment on the quality of Samwin products.

Metal Oxide Semiconductor Fet MOSFET Working Principle

MOS tube principle of operation (N-channel enhancement MOS field effect tube) it is the use of VCS to control the “inductive charge” how much to change the “inductive charge” formed by the conductive channel condition, and then achieve the purpose of controlling the drain current. In the manufacture of tubes, the insulating layer through the process of a large number of positive ions, so in the other side of the interface can be induced more negative charges, these negative charges to the high permeability impurities in the N region connected to the formation of a conductive channel, even in the VGS=0, there is a large leakage current ID. when the gate voltage changes, the channel is induced by the amount of charge is also changing the conductive channel width is also changed, so the leakage current Tn with the gate voltage, the drain current, the drain current, the drain current, the drain current, the drain current, the drain current, the conductive channel, the drain current, the drain current, the drain current, the drain current. Current Tn varies with the gate voltage.

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Semipower Metal Oxide Semiconductor Fet MOSFET

Types of MOSFET

N-Channel SGT MOSFET (25V-250V)

N-Channel Trench Mosfet (8v-200v)

P-Channel Trench Mosfet (8v-200v)

N-Channel Planar MOSFET (200v-1000v)

N-Channel Superjunction MOSFET (500v-900v)

Metal Oxide Semiconductor Fet MOSFET Quality Control

Metal Oxide Semiconductor Fet MOSFET Working Principle