The conductive channel of an N channel trench MOSFET is composed of majority carrier electrons.
In an N channel trench MOSFET, a P-type semiconductor is typically used as the substrate, on which two N-type regions are formed to serve as the source and the drain. A very thin silicon dioxide insulating layer is formed on the surface of the P-type substrate between the source and the drain. A layer of metal electrode is then covered over the insulating layer to form the gate.
When a positive voltage is applied to the gate relative to the source, an electron inversion layer is formed on the surface of the P-type substrate beneath the insulating layer, creating an N-type conductive channel. This conductive channel connects the source and the drain, allowing electrons to flow between them, thereby forming the drain current.
As the gate voltage increases, the width of the conductive channel increases, leading to an increase in the drain current. When the gate voltage increases to a certain level, the conductive channel is pinched off, and the drain current reaches saturation.
N channel trench MOSFETs have higher electron mobility, making them widely used in high-speed digital circuits and RF circuits.
N channel trench MOSFETs usually have lower on-resistance and higher switching speed compared to P-channel field-effect transistors.
SEMIPOWER N channel trench MOSFETs adopt shielded gate trench technology with charge balance functionality, which significantly improves the device's on-resistance temperature characteristics. This effectively controls the increase in the device's on-resistance with rising temperatures, thereby greatly enhancing the device's current capability and impact resistance at high temperatures. Thus, Semipower Technology N channel trench MOSFETs are better suited for use in high-temperature and harsh environments.
SEMIPOWER's 250V N channel MOSFETs feature high-quality chip design, combined with advanced packaging technology, increasing the system efficiency and power density of the 250V N channel MOSFETs during power conversion. It also ensures their impact resistance during switching processes in harsh environments, achieving fast, stable, and efficient power management and motor control.
