Jul 09 , 2024
General Description：
This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
Features:
High ruggedness
Low RDS(ON) (Typ 12.7mΩ)@VGS=4.5V (Typ 9.6mΩ)@VGS=10V
Low Gate Charge (Typ 22nC)
Improved dv/dt Capability
100% Avalanche Tested
Application: Synchronous Rectification, Li Battery Protect Board, Motor Driver
