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SW030R10E8S

SW030R10E8S N-Channel SGT MOSFET

Features

  • High ruggedness

  • Low RosoN (Typ 2.5mΩ)@Ves=10V

  • Low Gate Charge (Typ 114nC)

  • Improved dv/dt Capability

  • 100% Avalanche Tested

  • Application: Synchronous Rectification, Li Battery Protect Board, Motor Drives


General Description

This power MOSFET is produced with advanced technology of SAMWVIN

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.


Samwin SW030R10E8S N-channel Enhanced mode TOLL MOSFET

Samwin SW030R10E8S N-channel Enhanced mode TOLL MOSFET

Samwin SW030R10E8S N-channel Enhanced mode TOLL MOSFET

Samwin SW030R10E8S N-channel Enhanced mode TOLL MOSFET

Samwin SW030R10E8S N-channel Enhanced mode TOLL MOSFET

Samwin SW030R10E8S N-channel Enhanced mode TOLL MOSFET

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E, GLP I-Park, No.8 Tiangu Road, Hi-tech Zone, Xi'an, Shanxi, China
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