Jul 09 , 2024
N-channel Enhanced mode TO-220F MOSFET
Features
⚫ High ruggedness
⚫ Low RDS(ON) (Typ 0.9Ω)@VGS=10V
⚫ Low Gate Charge (Typ 35nC)
⚫ Improved dv/dt Capability
⚫ 100% Avalanche Tested
⚫ Application: UPS、Inverter、TV-POWER
General Description:
This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
Disclairation:
- All the data&curve within this document was tested in SEMIPOWER TESTING&APPLICATION CENTER.
- This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing.
- Qualification Standards can also be found on the Web site www.samwinsemi.com.
- Any advice, please send your proposal to sales@samwinsemi.com.
Contact information：
SEMIPOWER TECHNOLOGY CO., LTD.
Add：15F, A Block, Cyber Tower, Tianan Cyber Park, Futian District, Shenzhen 518042 Guangdong, China
TEL：+86-29-8825 1977, +86-755-8398 1818
Sales Dept：+86-135 1029 2288, +86-135 1028 2288
Email：sales@samwinsemi.com
http://www.samwinsemi.com
