SW120R06VLS

SW120R06VLS N-Channel Trench Mosfet

Features

High ruggedness
Low RDS(ON) (Typ 12.6mΩ)@VGS=4.5V
RDS(ON) (Typ 10mΩ)@VGS=10V
Low Gate Charge (Typ 18nC)
improved dv/dt Capability
100% Avalanche Tested
Application: Synchronous Rectification, Li Battery Protect Board, Motor Drives

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

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Samwin SW120R06VLS N-channel Enhanced mode TO-251S/TO252 MOSFET

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