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SW1N60DC

Samwin N-Channel Planar MOSFET


N-channel Enhanced mode TO-252/SOT223 MOSFET


Features:

⚫ High ruggedness

⚫ Low RDS(ON) (Typ 7Ω)@VGS=10V

⚫ Low Gate Charge (Typ 7nC)

⚫ Improved dv/dt Capability

⚫ 100% Avalanche Tested

⚫ Application:Charger,Adaptor,LED


General Description:

This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.


Disclairation:

- All the data&curve within this document was tested in SEMIPOWER TESTING&APPLICATION CENTER.

- This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing.

- Qualification Standards can also be found on the Web site www.samwinsemi.com.

- Any advice, please send your proposal to sales@samwinsemi.com.


Contact information:

SEMIPOWER TECHNOLOGY CO., LTD.

Add:15F, A Block, Cyber Tower, Tianan Cyber Park, Futian District, Shenzhen 518042 Guangdong, China

TEL:+86-29-8825 1977, +86-755-8398 1818

Sales Dept:+86-135 1029 2288, +86-135 1028 2288

Email:sales@samwinsemi.com

http://www.samwinsemi.com


Samwin SW1N60DC N-channel Enhanced mode TO-252/SOT223 MOSFET

Samwin SW1N60DC N-channel Enhanced mode TO-252/SOT223 MOSFET

Samwin SW1N60DC N-channel Enhanced mode TO-252/SOT223 MOSFET

Samwin SW1N60DC N-channel Enhanced mode TO-252/SOT223 MOSFET

Samwin SW1N60DC N-channel Enhanced mode TO-252/SOT223 MOSFET

Samwin SW1N60DC N-channel Enhanced mode TO-252/SOT223 MOSFET

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E, GLP I-Park, No.8 Tiangu Road, Hi-tech Zone, Xi'an, Shanxi, China
sales@samwinsemi.com
+86-755-83981818