Jul 09 , 2024
▍ N-channel Enhanced mode TO-252/TO-251 MOSFET
General Description:
This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
Features:
⚫ High ruggedness
⚫ Low RDS(ON) (Typ 0.16Ω)@VGS=10V
⚫ Low Gate Charge (Typ 37nC)
⚫ Improved dv/dt Capability
⚫ 100% Avalanche Tested
⚫ Application:LED,DC-DC
Semipower Technology Co., Ltd.
