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SW2N40M

Samwin N-Channel Planar MOSFET

Features

  • High ruggedness

  • Low RDS(ON) (Typ 9.0Ω)@VGS=10V

  • Low Gate Charge (Typ 2.8nC)

  • Improved dv/dt Capability

  • Application: High frequency switching mode power supply,Electronic ballast, UPS, PFC, High power switching power supply, Control of electric welding machine


General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.


Samwin SW2N40M N-channel Enhanced mode STO-23 MOSFET

Samwin SW2N40M N-channel Enhanced mode STO-23 MOSFET

Samwin SW2N40M N-channel Enhanced mode STO-23 MOSFET

Samwin SW2N40M N-channel Enhanced mode STO-23 MOSFET

Samwin SW2N40M N-channel Enhanced mode STO-23 MOSFET

Samwin SW2N40M N-channel Enhanced mode STO-23 MOSFET


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E, GLP I-Park, No.8 Tiangu Road, Hi-tech Zone, Xi'an, Shanxi, China
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