Jul 09 , 2024
▍ N-channel Enhanced mode TO-220 MOSFET
Features:
⚫ High ruggedness
⚫ Low RDS(ON) (Typ 0.15Ω)@VGS=10V
⚫ Low Gate Charge (Typ 19nC)
⚫ Improved dv/dt Capability
⚫ 100% Avalanche Tested
⚫ Application: LED, Charger, PC Power
General Description:
This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
SEMIPOWER TECHNOLOGY CO., LTD.
Add：15F, A Block, Cyber Tower, Tianan Cyber Park, Futian District, Shenzhen 518042 Guangdong, China
TEL：+86-29-8825 1977, +86-755-8398 1818
Sales Dept：+86-135 1029 2288, +86-135 1028 2288
Email：sales@samwinsemi.com
http://www.samwinsemi.com
