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SW6N70B

Samwin N-Channel Planar MOSFET

Features

  • High ruggedness

  • Low RDS(ON) (Typ 1.35Ω)@VGS=10V

  • Low Gate Charge (Typ 22nC)

  • Improved dv/dt Capability

  • 100% Avalanche Tested

  • Application: LED, Charger, PC Power


General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.


Samwin SW6N70B N-channel Enhanced mode TO-220F MOSFET

Samwin SW6N70B N-channel Enhanced mode TO-220F MOSFET

Samwin SW6N70B N-channel Enhanced mode TO-220F MOSFET

Samwin SW6N70B N-channel Enhanced mode TO-220F MOSFET

Samwin SW6N70B N-channel Enhanced mode TO-220F MOSFET

Samwin SW6N70B N-channel Enhanced mode TO-220F MOSFET


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E, GLP I-Park, No.8 Tiangu Road, Hi-tech Zone, Xi'an, Shanxi, China
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