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SW8N65M

Samwin N-Channel Planar MOSFET

Features

  • High ruggedness

  • Low RDS(ON) (Typ 0.88Ω)@VGS=10V

  • Low Gate Charge (Typ 32nC)

  • Improved dv/dt Capability

  • 100% Avalanche Tested

  • Application: LED, Charger, PC Power


General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.


Samwin SW8N65M N-channel Enhanced mode TO-252/TO-251/TO-262N MOSFET

Samwin SW8N65M N-channel Enhanced mode TO-252/TO-251/TO-262N MOSFET

Samwin SW8N65M N-channel Enhanced mode TO-252/TO-251/TO-262N MOSFET

Samwin SW8N65M N-channel Enhanced mode TO-252/TO-251/TO-262N MOSFET

Samwin SW8N65M N-channel Enhanced mode TO-252/TO-251/TO-262N MOSFET

Samwin SW8N65M N-channel Enhanced mode TO-252/TO-251/TO-262N MOSFET


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E, GLP I-Park, No.8 Tiangu Road, Hi-tech Zone, Xi'an, Shanxi, China
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