P-Channel Trench Mosfet (8v-200v)
P-Channel Trench MOSFET adopts advanced process manufacturing technology, better process conditions, and finely optimized device structure to continuously optimize product on-resistance, switching characteristics, reliability, etc., and continues to promote product iteration, with a rich product series, industry-leading Its parameter performance and excellent reliability have become industry benchmarks. Products are widely used in various fields such as motor drives, battery management systems, load switches, communications, and consumer electronics. At the same time, a variety of package shapes are provided for customers to choose from.
Semipower Test Application Center
Xi'an CorePac Power Device Testing Application Center is a key laboratory in Shaanxi Province, and is also the most complete testing center for power device testing in China. The center was accred...
How Engineers Choose the Right MOSFET
As manufacturing technology develops and advances, system designers must keep pace with technological developments in order to select the most appropriate electronic components for their designs. MOSF...
Semipower Held a Party to Welcome Newcomers
Semipower held a party to welcome newcomersThe newcomers were just graduated from university. They are energetic and full of passion to make contribution to the development of company.
UPS
The increase in power density and energy efficiency has brought new challenges to the design of UPS (Uninterruptible PowerSupply), SEMIPOWER's highly reliable MOSFET series products can help you to comprehensively improve the performance of the product, and easily cope with a variety of challenges.
N-Channel Planar MOSFET (200v-1000v)
SEMIPOWER TECHNOLOGY: By adopting the most advanced process and layout structure, Planar MOSFET power density is maximized, which significantly reduces the conduction loss in the current conduction process. At the same time, the current flow in the chip cell will be more uniform and stable; for high-frequency switching applications, it effectively reduces the gate charge (Qg), especially the gate-drain charge (Qgd), thus reducing the switching power loss during fast switching. By adopting these advanced technological means, the MOSFET's FOM (Quality Factor (Qg*Rdson)) has been able to achieve an industry-leading level.