University and Enterprise Cooperation: Automatic and Information Engineering of Xi'an University of Technology and Semipower
Automatic and Information Engineering of Xi’an Universityof Technology and Semipower signed contract on Postgraduate joint training baseand held unveiling ceremony on March 25th, 2019.Semipower will ...
Wuxi, Jiangsu Will Unify Local Standards for Photoelectric Conversion Rate of Solar Photovoltaic Modules
Two local standards proposed by Wuxi, Jiangsu, "Photovoltaic Module Photoelectric Conversion Efficiency Test Method" and "Determination of Trace Element Content in Solar Grade Silicon -...
SW014R04VLS
This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate cha...
Semipower High Efficiency Rectifier Diode: Creating a Greener Future
In the quest for a sustainable and energy-efficient future, the role of advanced semiconductor devices cannot be overstated. Among these, high efficiency rectifier diodes play a crucial role in enhanc...
SS32BF~SS320BF
Surface Mount Schottky Barrier RectifierReverse Voltage -20 to 200VForward Current -3.0AFEATURESMetal silicon junction, majority carrier conductionFor surface mounted applicationsLow power loss, high ...
Drone
2015 is called the first year of China's drone, the drone industry continues to heat up. UAVs can be seen in aerial photography, agricultural plant protection, mapping, reconnaissance and other fields, and the application of UAVs will be greatly expanded with the advancement of technology.SEMIPOWER's comprehensive range of low-voltage products can meet the power and efficiency requirements of various environments, laying the cornerstone of a highly reliable control system for customers.
SW017R03VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 2.9mΩ)@VGS=4.5V (Typ 2.0mΩ)@VGS=10VLow Gate Charge (Typ 150nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rec...
SW70N65KLF
FeaturesHigh ruggednessLow RDS(ON) (Typ 35mΩ)@VGS=10VLow Gate Charge (Typ 163nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
IEC TC47/WG6 and IEC TC47/WG7 Working Group Meeting
IEC TC47/WG6 and IEC TC47/WG7 Working Group Meeting was held fromFeb.27thto March1st, 2019 in Shenzhen.Themeeting was mainly held by The 13thResearch Institute of ChinaElectronics Technology Group Cor...
China Will Become the World's Largest Solar Cell Producer
DisplaySearch, a US market research company, released a forecast saying that the global production capacity of solar cell units in 2009 will increase by 56% over the previous year, reaching 17GW. From...
SW014R04VLS
General Description：This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics,including fast switching time, low on resistance...
Semipower Fast Recovery Bridge Rectifier: Enhancing Efficiency and Performance
In the rapidly evolving world of electronics, the demand for high-performance and efficient components is ever-increasing. Fast recovery bridge rectifiers are pivotal in ensuring the smooth and effici...
DS32W~DS320W
Surface Mount Schottky Barrier RectifierReverse Voltage -20 to 200 VForward Current -3.0AFEATURESMetal silicon junction, majority carrier conductionFor surface mounted applicationsLow power loss, high...
