MMSZ4678~MMSZ4717
FEATURESTotal power dissipation: Max.350mWWide zener reverse voltage range 1.8V to 43VSmall plastic package suitable for surface mounted designTolerance approximately+5%MECHANICAL DATACase: SOD.123Ter...
SMF5.0A~SMF220A
FEATURESFor surface mounted applications in order to optimize board space.Low profile packageGlass passivated junctionLow inductancePlastic package has Underwriters Laboratory FlammabilityMECHANICAL D...
ESDBL8V0D3
FeaturesLow Clamping VoltageWorking Voltage: 8VLow Leakage CurrentIEC COMPATIBILITY(EN61000-4)IEC61000-4-2(ESD): ±25kV(air), ±25kV(contact)JESD22-A114-B-ESD Voltage: ±16kV (Per human body model)ESD...
T-1N4148W
FEATURESFor surface mounted applicationsGlass Passivated Chip JunctionFast reverse recovery timeldeal for automated placementLead free in comply with EU RoHS 2011/65/EU directivesMECHANICAL DATACase: ...
SSL545BF
Surface Mount Schottky Bamier RectifierReverse Voltage - 45VForward Current - 5.0AFEATURESMetal silicon junction, majority carrier conductionFor surface mounted applicationsLow power loss, high effici...
BAT46W
FEATURESHigh breakdown voltageLow turn-on voltageGuard ring construction for transient protectionMECHANICAL DATACase: SOD.123Terminals: Solderable per MIL-STD-750, Method 2026Approx. Weight: 16mg/0.00...
FMSB30B~FMSB30M
FEATURESGlass Passivated Chip JunctionReverse Voltage -100 to 1000 VForward Current - 3.0 AFast reverse recovery timeDesigned for Surface Mount ApplicationMECHANICAL DATACase: UMSBTerminals: Solderabl...
SW072P03VT
FeaturesHigh ruggednessLow RDS(ON) (Typ 9.4mΩ)@VGS=-4.5VRDS(ON) (Typ 7.0mΩ)@VGS=-10VLow Gate Charge (Typ 45nC)Improved dv/dt Capability100% Avalanche TestedApplication: DC-DC Converter, Motor Contro...
SW50P04
FeaturesHigh ruggednessLow RDS(ON) (Typ 19mΩ)@VGS=-4.5VRDS(ON) (Typ 14mΩ)@VGS=-10VLow Gate Charge (Typ 61nC)Improved dv/dt Capability100% Avalanche TestedApplication: DC-DC Converter, Motor ControlG...
SW20N20D
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
SW5N25K3
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.5Ω)@VGS=10VLow Gate Charge (Typ 3.6nC)Improved dv/dt Capability100% Avalanche TestedApplication: Charger, LED, PC PowerGeneral DescriptionThis power MOSFET i...
University Industry Research Cooperation: Internship Base for Student Training
Semipower has signed joint laboratory cooperation agreements with 8 universities and colleges, including xi'an jiaotong university, xi'an electronic science and technology university, northwes...
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