SW028P04
FeaturesHigh ruggednessLow RDS(ON) (Typ 23mΩ)@VGS=-4.5V (Typ 19mΩ)@VGS=-10VLow Gate Charge (Typ 48nC)Improved dv/dt Capability100% Avalanche TestedApplication: DC-DC Converter, ...
SW630D
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
SW45N60K2
FeaturesHigh ruggednessLow RDS(ON) (Typ 60mΩ)@VGS=10VLow Gate Charge (Typ 74nC)Improved dv/dt Capability100% Avalanche TestedApplication: Charger, LED, UPSGeneral DescriptionThis power MOSFET is prod...
Mr. Yan Zhongyi, Global Vice President of Keysight Technology, and His Delegation Visited Chippower Technology
On January 17, Keysight Global Vice President/Greater China General Manager Mr. Yan Zhongyi led Greater China West Sales Manager Mr. Zhao Liang and Key Account Manager Mr. Chen Jie to visit Semipower ...
TO-251N High Side Switch Mosfet
BrandSAMWINMountingThrough HolePins3Weight(typ.)337 (mg)Packing MethodTube PackagingMinimum Quantity75 pcs/TubePackage Dimensions
China Plans to Build 15 Semiconductor Factories from 2017 to 2019, Catching up with Japan and South Korea
[Global Network Comprehensive Report] Tencent’s market value exceeded US$500 billion for the first time on the 20th, ranking first in Asia and sixth in the world. This is worried about damaging the m...
How Engineers Choose the Right MOSFET
As manufacturing technology develops and advances, system designers must keep pace with technological developments in order to select the most appropriate electronic components for their designs. MOSF...
Semipower Held a Party to Welcome Newcomers
Semipower held a party to welcome newcomersThe newcomers were just graduated from university. They are energetic and full of passion to make contribution to the development of company.
MBR1040xS~MBR10200xS
FEATURESHigh current capabilityLow forward voltage dropLow power loss, high efficiencyHigh surge capabilityHigh temperature soldering guaranteedMounting position: any
2W SIP7 Constant Voltage Non Stabilized High Isolation
20W DIP1 * 2 Wide Voltage
Cases
UPS
The rise in power density and energy efficiency presents new design challenges for UPS systems. SEMIPOWER's reliable MOSFET series enhances product performance, effectively addressing these challenges.
N-Channel Planar MOSFET (200v-1000v)
SEMIPOWER TECHNOLOGY: By adopting the most advanced process and layout structure, Planar MOSFET power density is maximized, which significantly reduces the conduction loss in the current conduction process. At the same time, the current flow in the chip cell will be more uniform and stable; for high-frequency switching applications, it effectively reduces the gate charge (Qg), especially the gate-drain charge (Qgd), thus reducing the switching power loss during fast switching. By adopting these advanced technological means, the MOSFET's FOM (Quality Factor (Qg*Rdson)) has been able to achieve an industry-leading level.
