Aug 10 , 2024
High ruggedness
Low RDS(ON) (Typ 3.1mΩ)@VGS=4.5V
RDS(ON) (Typ 2.4mΩ)@VGS=10V
Low Gate Charge (Typ 206nC)
Improved dv/dt Capability
100% Avalanche Tested
Application: Synchronous Rectification, Li Battery Protect Board, Motor Drives
This power MOSFET is produced with advanced technology of SAMWVIN.
This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
