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SW023R04VLT

SW023R04VLT N-Channel Trench Mosfet

Features

  • High ruggedness

  • Low RDS(ON) (Typ 3.1mΩ)@VGS=4.5V

            RDS(ON) (Typ 2.4mΩ)@VGS=10V

  • Low Gate Charge (Typ 206nC)

  • Improved dv/dt Capability

  • 100% Avalanche Tested

  • Application: Synchronous Rectification, Li Battery Protect Board, Motor Drives


General Description

This power MOSFET is produced with advanced technology of SAMWVIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.


Samwin SW023R04VLT N-channel Enhanced mode TO-220FB/TO-263 MOSFET

Samwin SW023R04VLT N-channel Enhanced mode TO-220FB/TO-263 MOSFET

Samwin SW023R04VLT N-channel Enhanced mode TO-220FB/TO-263 MOSFET

Samwin SW023R04VLT N-channel Enhanced mode TO-220FB/TO-263 MOSFET

Samwin SW023R04VLT N-channel Enhanced mode TO-220FB/TO-263 MOSFET

Samwin SW023R04VLT N-channel Enhanced mode TO-220FB/TO-263 MOSFET

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E, GLP I-Park, No.8 Tiangu Road, Hi-tech Zone, Xi'an, Shanxi, China
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