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SW350R06VT

SW350R06VT N-Channel Trench Mosfet

Features

  • High ruggedness

  • Low RDS(ON)(Typ 37mΩ)@VGS=4.5V

                          (Typ 32mΩ)@VGS=10V

  • Low Gate Charge (Typ 21nC)

  • Improved dv/dt Capability

  • 100% Avalanche Tested

  • Application: DC-DC Converter, Motor Control, Synchronous Rectification, inverter


General Description

This power MOSFET is produced with advanced technology of SAMWVIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.


Samwin SW350R06VT N-channel Enhanced mode TO-251/TO-252 MOSFET

Samwin SW350R06VT N-channel Enhanced mode TO-251/TO-252 MOSFET

Samwin SW350R06VT N-channel Enhanced mode TO-251/TO-252 MOSFET

Samwin SW350R06VT N-channel Enhanced mode TO-251/TO-252 MOSFET

Samwin SW350R06VT N-channel Enhanced mode TO-251/TO-252 MOSFET

Samwin SW350R06VT N-channel Enhanced mode TO-251/TO-252 MOSFET

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E, GLP I-Park, No.8 Tiangu Road, Hi-tech Zone, Xi'an, Shanxi, China
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