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SW056R68E7T

SW056R68E7T N-Channel Trench Mosfet

Features

  • High ruggedness

  • Low RDS(ON) (Typ 5.8mΩ)@VGS=10V

  • Low Gate Charge (Typ 107nC)

  • Improved dv/dt Capability

  • 100% Avalanche Tested

  • Application: Synchronous Rectification, Li Battery Protect Board, inverter


General Description

This power MOSFET is produced with advanced technology of SAMWVIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.


Samwin SW056R68E7T N-channel Enhanced mode TO-220/TO-263 MOSFET

Samwin SW056R68E7T N-channel Enhanced mode TO-220/TO-263 MOSFET

Samwin SW056R68E7T N-channel Enhanced mode TO-220/TO-263 MOSFET

Samwin SW056R68E7T N-channel Enhanced mode TO-220/TO-263 MOSFET

Samwin SW056R68E7T N-channel Enhanced mode TO-220/TO-263 MOSFET

Samwin SW056R68E7T N-channel Enhanced mode TO-220/TO-263 MOSFET

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