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SW018R03VLT

SW018R03VLT N-Channel Trench Mosfet

Features

  • High ruggedness

  • Low RDS(ON) (Typ 2.5mΩ)@VGS=4.5V

                           (Typ 1.6mΩ)@VGS=10V

  • Low Gate Charge (Typ 153nC)

  • Improved dv/dt Capability

  • 100% Avalanche Tested

  • Application: Synchronous Rectification, Li Battery Protect Board, Inverter


General Description

This power MOSFET is produced with advanced technology of SAMWVIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.


Samwin SW018R03VLT N-channel Enhanced mode DFN5*6 MOSFET

Samwin SW018R03VLT N-channel Enhanced mode DFN5*6 MOSFET

Samwin SW018R03VLT N-channel Enhanced mode DFN5*6 MOSFET

Samwin SW018R03VLT N-channel Enhanced mode DFN5*6 MOSFET

Samwin SW018R03VLT N-channel Enhanced mode DFN5*6 MOSFET

Samwin SW018R03VLT N-channel Enhanced mode DFN5*6 MOSFET

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E, GLP I-Park, No.8 Tiangu Road, Hi-tech Zone, Xi'an, Shanxi, China
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