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SW030R03VLT

SW030R03VLT N-Channel Trench Mosfet

Features

  • High ruggedness

  • Low RDS(ON) (Typ 4.4mΩ)@VGS=4.5V

                           (Typ 3.0mΩ)@VGS=10V

  • Low Gate Charge (Typ 79nC)

  • Improved dv/dt Capability

  • 100% Avalanche Tested

  • Application: Synchronous Rectification, Li Battery Protect Board, Motor Drivers


General Description

This power MOSFET is produced with advanced technology of SAMWVIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.


Samwin SW030R03VLT N-channel Enhanced mode TO-252 MOSFET

Samwin SW030R03VLT N-channel Enhanced mode TO-252 MOSFET

Samwin SW030R03VLT N-channel Enhanced mode TO-252 MOSFET

Samwin SW030R03VLT N-channel Enhanced mode TO-252 MOSFET

Samwin SW030R03VLT N-channel Enhanced mode TO-252 MOSFET

Samwin SW030R03VLT N-channel Enhanced mode TO-252 MOSFET

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E, GLP I-Park, No.8 Tiangu Road, Hi-tech Zone, Xi'an, Shanxi, China
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