Jul 09 , 2024
High ruggedness
Low RDS(ON) (Typ 28mΩ)@VGS=2.5V
(Typ 21mΩ)@VGS=4.5V
Low Gate Charge (Typ 5.2nC)
Improved dv/dt Capability
Application: Battery Protection, Power management
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
