Jul 09 , 2024
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
High ruggedness
Low R»soN (Typ 25mΩ)@Ves=4.5V
(Typ 19.8mQ)@Vs=10V
Low Gate Charge (Typ 10nC)
lmproved dv/dt Capability
100% Avalanche Tested
Application:Synchronous Rectification, Li Battery Protect Board, Inverter
