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SW050R85E8S

SW050R85E8S N-Channel SGT MOSFET

Features

  • High ruggedness

  • Low RosoN (Typ 5.3mΩ)@Vs=10V

  • Low Gate Charge (Typ 44nC)

  • Improved dv/dt Capability

  • 100% Avalanche Tested

  • Application: Synchronous Rectification, Li Battery Protect Board, inverter


Samwin SW050R85E8S N-channel Enhanced mode DFN5*6 MOSFET

Samwin SW050R85E8S N-channel Enhanced mode DFN5*6 MOSFET

Samwin SW050R85E8S N-channel Enhanced mode DFN5*6 MOSFET

Samwin SW050R85E8S N-channel Enhanced mode DFN5*6 MOSFET

Samwin SW050R85E8S N-channel Enhanced mode DFN5*6 MOSFET

Samwin SW050R85E8S N-channel Enhanced mode DFN5*6 MOSFET

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E, GLP I-Park, No.8 Tiangu Road, Hi-tech Zone, Xi'an, Shanxi, China
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