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SW038R10VS

SW038R10VS N-Channel SGT MOSFET

Features

  • High ruggedness

  • Low RosN (Typ 5.0mΩ)@Ves=4.5V

  • Rosc» (Typ 3.6mΩ)@Ves-10V

  • Low Gate Charge (Typ 71nC)

  • Improved dv/dt Capability

  • 100% Avalanche Tested

  • Application: Synchronous Rectifcation, Li Battery Protect Board, Motor Drives


General Description

This power MOSFET is produced with advanced technology of SAMVVIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.


Samwin SW038R10VS N-channel Enhanced mode DFN5*6 MOSFET

Samwin SW038R10VS N-channel Enhanced mode DFN5*6 MOSFET

Samwin SW038R10VS N-channel Enhanced mode DFN5*6 MOSFET

Samwin SW038R10VS N-channel Enhanced mode DFN5*6 MOSFET

Samwin SW038R10VS N-channel Enhanced mode DFN5*6 MOSFET

Samwin SW038R10VS N-channel Enhanced mode DFN5*6 MOSFET

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E, GLP I-Park, No.8 Tiangu Road, Hi-tech Zone, Xi'an, Shanxi, China
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