Jul 09 , 2024
High ruggedness
Low RosoN (Typ 5.8mΩ)@Ves=10V
Low Gate Charge (Typ 50nC)
Improved dv/dt Capability
100% Avalanche Tested
Application: Synchronous Rectifcation, Li Battery Protect Board, inverter
This power MOSFET is produced with advanced technology of SAMVVIN.
This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
