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SW083R06VLS

SW083R06VLS N-Channel SGT MOSFET

General Description:

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.



Features:

  • High ruggedness

  • Low RosoN (Typ 13mΩ)@Ves=4.5V

  • (Typ 9.7ma)@Vas=10V

  • Low Gate Charge (Typ 22nC)

  • Improved dv/dt Capability

  • 100% Avalanche Tested

  • Application:Synchronous Rectification, Li Battery Protect Board, inverter


Samwin SW083R06VLS N-channel Enhanced mode SOP-8 MOSFET

Samwin SW083R06VLS N-channel Enhanced mode SOP-8 MOSFET

Samwin SW083R06VLS N-channel Enhanced mode SOP-8 MOSFET

Samwin SW083R06VLS N-channel Enhanced mode SOP-8 MOSFET

Samwin SW083R06VLS N-channel Enhanced mode SOP-8 MOSFET

Samwin SW083R06VLS N-channel Enhanced mode SOP-8 MOSFET


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