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SW064R10VLS

SW064R10VLS N-Channel SGT MOSFET

Features

  • High ruggedness

  • Low RosN (Typ 7.2mΩ)@Ves=4.5V

  • (Typ 5.6mΩ)@Ves=10V

  • Low Gate Charge (Typ 58nC)

  • Improved dv/dt Capability

  • 100% Avalanche Tested

  • Application: Synchronous Rectification, Li Battery Protect Board, Motor Drives


General Description

This power MOSFET is produced with advanced technology of SAMWVIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.


Samwin SW064R10VLS N-channel Enhanced mode TO-252 MOSFET

Samwin SW064R10VLS N-channel Enhanced mode TO-252 MOSFET

Samwin SW064R10VLS N-channel Enhanced mode TO-252 MOSFET

Samwin SW064R10VLS N-channel Enhanced mode TO-252 MOSFET

Samwin SW064R10VLS N-channel Enhanced mode TO-252 MOSFET

Samwin SW064R10VLS N-channel Enhanced mode TO-252 MOSFET

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E, GLP I-Park, No.8 Tiangu Road, Hi-tech Zone, Xi'an, Shanxi, China
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