Jul 09 , 2024
High ruggedness
Low RDS(ON) (Typ 22.5mΩ)@VGS=2.5V
Low RDS(ON) (Typ 17mΩ)@VGS=4.5V
Low Gate Charge (Typ 7nC)
Improved dv/dt Capability
Application: Battery Protection, Power management
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
