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SW830M

Samwin N-Channel Planar MOSFET

Features

High ruggedness

Low RDS(ON) (Typ 1.26Ω)@VGS=10V

Low Gate Charge (Typ 14nC)

Improved dv/dt Capability

100% Avalanche Tested

Application: LED, Charger, PC Power


General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.


Samwin SW830M N-channel Enhanced mode TO-252 MOSFET

Samwin SW830M N-channel Enhanced mode TO-252 MOSFET

Samwin SW830M N-channel Enhanced mode TO-252 MOSFET

Samwin SW830M N-channel Enhanced mode TO-252 MOSFET

Samwin SW830M N-channel Enhanced mode TO-252 MOSFET

Samwin SW830M N-channel Enhanced mode TO-252 MOSFET


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E, GLP I-Park, No.8 Tiangu Road, Hi-tech Zone, Xi'an, Shanxi, China
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