Semipower Welcomes Xi'an Municipal Industry and Information Technology Commission IGBT R & D Project Review
On April 27, 2017, Semipower ushered in the Xi'an Municipal Industry and Information Technology Commission review team to review the IGBT power device R&D project applied to 1200V/900V/650V. M...
SW034R10ES
FeaturesHigh ruggednessLow RosoN (Typ 3.4mΩ)@Ves=10VLow Gate Charge (Typ 82nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Drive...
SW030R68E8T
FeaturesHigh ruggednessLow RDS(ON) (Typ 3.0mΩ)@VGS=10VLow Gate Charge (Typ 262nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Motor ...
SW6N65D
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
Semipower Reaches Cooperation Intention with Multiple Parties on Wireless Charging Project
Following Semipower and MAPS reaching a cooperation intention to jointly develop China's magnetic resonance wireless charging market project in March, the project has attracted the favor of many i...
SW064R10VLS
FeaturesHigh ruggednessLow RosN (Typ 7.2mΩ)@Ves=4.5V(Typ 5.6mΩ)@Ves=10VLow Gate Charge (Typ 58nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protec...
SW046R68E8T
FeaturesHigh ruggednessLow RDS(ON) (Typ 4.6mΩ)@VGS=10VLow Gate Charge (Typ 145nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, invert...
Semipower Won the 2017 Top Five Outstanding Technical Support IC Design Company Award in China
On March 24, 2017, "Electronic Engineering Special", "EDN Electronic Technology Design" and "International Electronic Business News" under AspenCore, the world's lead...
SW064R10VLS
FeaturesHigh ruggednessLow RosoN (Typ 8.1mΩ)@Ves=4.5V(Typ 6.6mΩ)@Vas=10VLow Gate Charge (Typ 58nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification.Li Battery Prote...
SW4N65M
FeaturesHigh ruggednessLow RDS(ON) (Typ 2.1Ω)@VGS=10VLow Gate Charge (Typ 15nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
SW050R68E8T
FeaturesHigh ruggednessLow RDS(ON) (Typ 5.2mΩ)@VGS=10VLow Gate Charge (Typ 129nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, Invert...
SW4N65DD
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
Semipower Won the Excellent Product Award at the 2017 China (Shenzhen) International Automotive Electronics Industry Annual Conference
On March 28, 2017, the 2017 China (Shenzhen) International Automotive Electronics Industry Annual Conference was grandly held at the Four Points by Sheraton Hotel. This annual meeting attracted nearly...
SW030R10E8S
FeaturesHigh ruggednessLow RosoN (Typ 2.5mΩ)@Ves=10VLow Gate Charge (Typ 114nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Driv...
SW046R68E8T
FeaturesHigh ruggednessLow RDS(ON) (Typ 4.8mΩ)@VGS=10VLow Gate Charge (Typ 146nC)lmproved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectification, Li Battery Protect Board, invert...
