Email Us

SW046R68E8T

SW046R68E8T N-Channel Trench Mosfet

Features

  • High ruggedness

  • Low RDS(ON) (Typ 4.8mΩ)@VGS=10V

  • Low Gate Charge (Typ 146nC)

  • lmproved dv/dt Capability

  • 100% Avalanche Tested

  • Application: Synchronous Rectification, Li Battery Protect Board, inverter


General Description

This power MOSFET is produced with advanced technology of SAMVIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.


Samwin SW046R68E8T N-channel Enhanced mode TO-252 MOSFET

Samwin SW046R68E8T N-channel Enhanced mode TO-252 MOSFET

Samwin SW046R68E8T N-channel Enhanced mode TO-252 MOSFET

Samwin SW046R68E8T N-channel Enhanced mode TO-252 MOSFET

Samwin SW046R68E8T N-channel Enhanced mode TO-252 MOSFET


Samwin SW046R68E8T N-channel Enhanced mode TO-252 MOSFET

CONTACT US
We’re here to help. Fill out this brief form and a representative will contact you.
Related N-Channel Trench Mosfet (8v-200v)
Quick Links
Contact Us
Address: E, GLP I-Park, No.8 Tiangu Road, Hi-tech Zone, Xi'an, Shanxi, China
E, GLP I-Park, No.8 Tiangu Road, Hi-tech Zone, Xi'an, Shanxi, China
sales@samwinsemi.com
+86-755-83981818