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SW029R68E8T

SW029R68E8T N-Channel Trench Mosfet

Features

  • High ruggedness

  • Low RDS(ON) (Typ 3.0mΩ)@VGS=10V

  • Low Gate Charge (Typ 277nC)

  • Improved dv/dt Capability

  • 100% Avalanche Tested

  • Application: Synchronous Rectification, Li Battery Protect Board, Motor Drives


General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.


Samwin SW029R68E8T N-channel Enhanced mode TO-220FB MOSFET

Samwin SW029R68E8T N-channel Enhanced mode TO-220FB MOSFET

Samwin SW029R68E8T N-channel Enhanced mode TO-220FB MOSFET

Samwin SW029R68E8T N-channel Enhanced mode TO-220FB MOSFET

Samwin SW029R68E8T N-channel Enhanced mode TO-220FB MOSFET

Samwin SW029R68E8T N-channel Enhanced mode TO-220FB MOSFET

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E, GLP I-Park, No.8 Tiangu Road, Hi-tech Zone, Xi'an, Shanxi, China
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