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SW068R08E8T

SW068R08E8T N-Channel Trench Mosfet

Features

  • High ruggedness

  • LowRDS(ON) (Typ 6.7mΩ)@VGS=10V

  • Low Gate Charge (Typ 130nC)

  • Improved dv/dt Capability

  • 100% Avalanche Tested

  • Application: Synchronous Rectification, Li Battery Protect Board, inverter


General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.


Samwin SW068R08E8T N-channel Enhanced mode TO-220 MOSFET

Samwin SW068R08E8T N-channel Enhanced mode TO-220 MOSFET

Samwin SW068R08E8T N-channel Enhanced mode TO-220 MOSFET

Samwin SW068R08E8T N-channel Enhanced mode TO-220 MOSFET

Samwin SW068R08E8T N-channel Enhanced mode TO-220 MOSFET

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E, GLP I-Park, No.8 Tiangu Road, Hi-tech Zone, Xi'an, Shanxi, China
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