SW5N65K3
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.8Ω)@VGS=10VLow Gate Charge (Typ 10nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
Our History
Xi'an Longmen Action Plan TOP20 in 2019--SEMIPOWER
Global Venture Capital Summit 2019 was opened in Xi’an on Aug. 29, 2019 to set up aseamless channel between enterprises, industries and capital and gather trillions of capital for the development of ...
The First Chinese scientist to win the International Power Semiconductor Pioneer Award
News came from the 27th International Annual Conference on Power Semiconductor Devices and Integrated Circuits, the top academic annual conference in the field of power semiconductors held recently. P...
SS52~SS520
Surface Mount Schottky Barrier RectifierReverse Voltage - 20 to 200 VForward Current - 5.0AFeatures*Metal silicon junction, majority carrier conduction*For surface mounted applications*Low power loss,...
SW20N50B
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.2Ω)@VGS=10VLow Gate Charge (Typ 52nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET is...
Small Signal Schottky Diode
Adapter
The competition of small size and low cost is intensifying in the Adapter market, SEMIPOWER strives to reduce the overall cost of customers while continuously improving the reliability of its products, and provides the most cost-effective and excellent semiconductor devices for your products.
1N4001W~1N4007W
FEATURESFor surface mounted applicationsLow profile packageGlass Passivated Chip Junctionldeal for automated placementLead free in comply with EU RoHS 2011/65/EU directivesMECHANICAL DATACase: SOD-123...
ES1AF~ES1JF
FEATURESFor surface mounted applicationsLow profile packageGlass Passivated Chip JunctionSuperfast reverse recovery timeLead free in comply with EU RoHS 2011/65/EU directivesMECHANICAL DATACase: SMAFT...
SW051R03VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 7.3mΩ)@VGS=4.5V RDS(ON) (Typ 4.7mΩ)@VGS=10VLow Gate Charge (Typ 43nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectificati...
SW20N50D
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
SW8N65K3
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.55Ω)@VGS=10VLow Gate Charge (Typ 15nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
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