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SW8N65K3

SW8N65K3 N-Channel Superjunction MOSFET

Features

  • High ruggedness

  • Low RDS(ON) (Typ 0.55Ω)@VGS=10V

  • Low Gate Charge (Typ 15nC)

  • Improved dv/dt Capability

  • 100% Avalanche Tested

  • Application: LED, Charger, PC Power


General Description

This power MOSFET is produced with advanced super junction technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.


Samwin SW8N65K3 N-channel Enhanced mode TO-220F/TO-252 MOSFET

Samwin SW8N65K3 N-channel Enhanced mode TO-220F/TO-252 MOSFET

Samwin SW8N65K3 N-channel Enhanced mode TO-220F/TO-252 MOSFET

Samwin SW8N65K3 N-channel Enhanced mode TO-220F/TO-252 MOSFET

Samwin SW8N65K3 N-channel Enhanced mode TO-220F/TO-252 MOSFET

Samwin SW8N65K3 N-channel Enhanced mode TO-220F/TO-252 MOSFET

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E, GLP I-Park, No.8 Tiangu Road, Hi-tech Zone, Xi'an, Shanxi, China
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