Aug 10 , 2024
High ruggedness
Low RDS(ON) (Typ 65mΩ)@VGS=10V
Low Gate Charge (Typ 74nC)
Improved dv/dt Capability
100% Avalanche Tested
Application: Charger, LED, UPS
This power MOSFET is produced with super junction advanced technology of SAMWIN
This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
