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SW11N65KL

SW11N65KL N-Channel Superjunction MOSFET

Features

  • High ruggedness

  • Low RDS(ON) (Typ 0.33Ω)@VGS=10V

  • Low Gate Charge (Typ 23nC)

  • Improved dv/dt Capability

  • 100% Avalanche Tested

  • Application: LED, Charger, PC Power


General Description

This power MOSFET is produced with advanced super junction technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.


Samwin SW11N65KL N-channel Enhanced mode TO-220F/TO-220FT/TO-252 MOSFET

Samwin SW11N65KL N-channel Enhanced mode TO-220F/TO-220FT/TO-252 MOSFET

Samwin SW11N65KL N-channel Enhanced mode TO-220F/TO-220FT/TO-252 MOSFET

Samwin SW11N65KL N-channel Enhanced mode TO-220F/TO-220FT/TO-252 MOSFET

Samwin SW11N65KL N-channel Enhanced mode TO-220F/TO-220FT/TO-252 MOSFET

Samwin SW11N65KL N-channel Enhanced mode TO-220F/TO-220FT/TO-252 MOSFET

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E, GLP I-Park, No.8 Tiangu Road, Hi-tech Zone, Xi'an, Shanxi, China
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