Jul 09 , 2024
High ruggedness
Low RDS(ON) (Typ 1Ω)@VGS=10V
Low Gate Charge (Typ 13nC)
Improved dv/dt Capability
100% Avalanche Tested
Application: LED, Charger, Adaptor, TV-Power
This power MOSFET is produced with advanced super junction technology of SAMWVIN.
This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
