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SW16N60K

SW16N60K N-Channel Superjunction MOSFET

Features

  • High ruggedness

  • Low RDS(ON) (Typ 0.21Ω)@VGS=10V

  • Low Gate Charge (Typ 43nC)

  • Improved dv/dt Capability

  • 100% Avalanche Tested

  • Application: LED, Charger, PC Power


General Description

This power MOSFET is produced with advanced super junction technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.


Samwin SW16N60K N-channel Enhanced mode TO-220F MOSFET

Samwin SW16N60K N-channel Enhanced mode TO-220F MOSFET

Samwin SW16N60K N-channel Enhanced mode TO-220F MOSFET

Samwin SW16N60K N-channel Enhanced mode TO-220F MOSFET

Samwin SW16N60K N-channel Enhanced mode TO-220F MOSFET

Samwin SW16N60K N-channel Enhanced mode TO-220F MOSFET

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E, GLP I-Park, No.8 Tiangu Road, Hi-tech Zone, Xi'an, Shanxi, China
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