SW023R04VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 3.1mΩ)@VGS=4.5V RDS(ON) (Typ 2.4mΩ)@VGS=10VLow Gate Charge (Typ 198nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectificat...
SW10N80K2
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.58Ω)@VGS=10VLow Gate Charge (Typ 27nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneralDescriptionThis power MOSFET is...
Warmly Welcome Ningbo Bull Optoelectronics to Visit Semipower
On January 25, 2018, three people from the purchasing department and R&D department of Ningbo Bull Optoelectronics Technology Co., Ltd. visited Semipower for an inspection. They mainly exchanged v...
SW046R85E8S
FeaturesHigh ruggednessLow RosoN (Typ 4.1mn)@Ves=10VLow Gate Charge (Typ 48nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Drives
SW15N65B
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.65Ω)@VGS=10VLow Gate Charge (Typ 31nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
SW047R04VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 5.6mΩ)@VGS=4.5V RDS(ON) (Typ 4.1mΩ)@VGS=10VLow Gate Charge (Typ 91nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectificati...
SW20N65D
General Description:This power MOSFET is produced with advanced technology of SAMWIN.This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially xcellent avalanche characteristics.
Warmly Welcome the Delegation from Xi'an University of Technology to Visit Xi'an Semipower
On January 16, 2018, a total of more than 300 students from 6 classes of Microelectronics Science and Technology and Electronic Science and Technology of the School of Automation and Information Engin...
SW046R85E8S
FeaturesHigh ruggednessLow RosoN (Typ 4.4mn)@Ves=10VLow Gate Charge (Typ 55nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectification,Li Battery Protect Board, Motor Drives
SW026R04VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 3.7mΩ)@VGS=4.5V RDS(ON) (Typ 2.8mΩ)@VGS=10VLow Gate Charge (Typ 43nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rectificatio...
The More You Understand, The More You Trust
On December 11, Mr. Huang Tao, general manager of Wuhan Zhiqili Technology Co., Ltd., led the company’s technical director, quality director, and technical supervisor to visit Semipower and had in-de...
SW054R85E8S
FeaturesHigh ruggednessLow RosoN (Typ 5.3mΩ)@Ves-10VLow Gate Charge (Typ 45nC)Improved dv/dt Capability100% Avalanche TestedApplication:Synchronous Rectifcation,Li Battery Protect Board, Motor Drives
SW20N65M
FeaturesHigh ruggednessLow RDS(ON) (Typ 0.32Ω)@VGS=10VLow Gate Charge (Typ 77nC)Improved dv/dt Capability100% Avalanche TestedApplication: LED, Charger, PC PowerGeneral DescriptionThis power MOSFET i...
SW023R04VLT
FeaturesHigh ruggednessLow RDS(ON) (Typ 3.1mΩ)@VGS=4.5V (Typ 2.4mΩ)@VGS=10VLow Gate Charge (Typ 195nC)Improved dv/dt Capability100% Avalanche TestedApplication: Synchronous Rec...
The Director-General of Xi'an Science and Technology Bureau LED the Leaders of the High-Tech Division and the Intellectual Property Division to Visit and Guide the Work
On December 21, 2017, Semipower invited Gao Jiping, deputy director of Xi'an Science and Technology Bureau, Wang Bin, director of the High-tech Departm ent, and Li Jianxun, deputy director of the I...
