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SW046R85E8S

SW046R85E8S N-Channel SGT MOSFET

Features

  • High ruggedness

  • Low RosoN (Typ 4.1mn)@Ves=10V

  • Low Gate Charge (Typ 48nC)

  • Improved dv/dt Capability

  • 100% Avalanche Tested

  • Application: Synchronous Rectification, Li Battery Protect Board, Motor Drives


General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.


Samwin SW046R85E8S N-channel Enhanced mode PTO-252 MOSFET

Samwin SW046R85E8S N-channel Enhanced mode PTO-252 MOSFET

Samwin SW046R85E8S N-channel Enhanced mode PTO-252 MOSFET

Samwin SW046R85E8S N-channel Enhanced mode PTO-252 MOSFET

Samwin SW046R85E8S N-channel Enhanced mode PTO-252 MOSFET

Samwin SW046R85E8S N-channel Enhanced mode PTO-252 MOSFET

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E, GLP I-Park, No.8 Tiangu Road, Hi-tech Zone, Xi'an, Shanxi, China
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