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SW050R95E8S

SW050R95E8S N-Channel SGT MOSFET

Features

  • High ruggedness

  • Low RosoN (Typ 5.9mΩ)@Ves=10V

  • Low Gate Charge (Typ 50nC)

  • lmproved dv/dt Capability

  • 100% Avalanche Tested

  • Application: Synchronous Rectifcation, Li Battery Protect Board, Motor Drives


General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.


Samwin SW050R95E8S N-channel Enhanced mode TO-220/TO-263 MOSFET

Samwin SW050R95E8S N-channel Enhanced mode TO-220/TO-263 MOSFET

Samwin SW050R95E8S N-channel Enhanced mode TO-220/TO-263 MOSFET

Samwin SW050R95E8S N-channel Enhanced mode TO-220/TO-263 MOSFET

Samwin SW050R95E8S N-channel Enhanced mode TO-220/TO-263 MOSFET

Samwin SW050R95E8S N-channel Enhanced mode TO-220/TO-263 MOSFET

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E, GLP I-Park, No.8 Tiangu Road, Hi-tech Zone, Xi'an, Shanxi, China
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