Email Us

SW036R68E8T

SW036R68E8T N-Channel Trench Mosfet

Features

  • High ruggedness

  • Low RDS(ON) (Typ 4.2mΩ)@VGS=10V

  • Low Gate Charge (Typ 172nC)

  • Improved dv/dt Capability

  • 100% Avalanche Tested

  • Application: Synchronous Rectification, Li Battery Protect Board, Motor Drives


General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.


Samwin SW036R68E8T N-channel Enhanced mode TO-220FB/TO-263 MOSFET

Samwin SW036R68E8T N-channel Enhanced mode TO-220FB/TO-263 MOSFET

Samwin SW036R68E8T N-channel Enhanced mode TO-220FB/TO-263 MOSFET

Samwin SW036R68E8T N-channel Enhanced mode TO-220FB/TO-263 MOSFET

Samwin SW036R68E8T N-channel Enhanced mode TO-220FB/TO-263 MOSFET

Samwin SW036R68E8T N-channel Enhanced mode TO-220FB/TO-263 MOSFET

CONTACT US
We’re here to help. Fill out this brief form and a representative will contact you.
Related N-Channel Trench Mosfet (8v-200v)
Quick Links
Contact Us
Address: E, GLP I-Park, No.8 Tiangu Road, Hi-tech Zone, Xi'an, Shanxi, China
E, GLP I-Park, No.8 Tiangu Road, Hi-tech Zone, Xi'an, Shanxi, China
sales@samwinsemi.com
+86-755-83981818