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SW050R68E8T

SW050R68E8T N-Channel Trench Mosfet

Features

  • High ruggedness

  • Low RDS(ON) (Typ 4.7mΩ)@VGS=10V

  • Low Gate Charge (Typ 127nC)

  • Improved dv/dt Capability

  • 100% Avalanche Tested

  • Application: Synchronous Rectification, Li Battery Protect Board, Inverter


General Description

This power MOSFET is produced with advanced technology of SAMWVIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.


Samwin SW050R68E8T N-channel Enhanced mode DFN5*6 MOSFET

Samwin SW050R68E8T N-channel Enhanced mode DFN5*6 MOSFET

Samwin SW050R68E8T N-channel Enhanced mode DFN5*6 MOSFET

Samwin SW050R68E8T N-channel Enhanced mode DFN5*6 MOSFET

Samwin SW050R68E8T N-channel Enhanced mode DFN5*6 MOSFET

Samwin SW050R68E8T N-channel Enhanced mode DFN5*6 MOSFET

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E, GLP I-Park, No.8 Tiangu Road, Hi-tech Zone, Xi'an, Shanxi, China
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