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SW015R03VLT

SW015R03VLT N-Channel Trench Mosfet

Features

  • High ruggedness

  • Low RDS(ON) (Typ 1.5mΩ)@VGS=4.5V

                           (Typ 1.2mΩ)@VGS=10V

  • Low Gate Charge (Typ 315nC)

  • Improved dv/dt Capability

  • 100% Avalanche Tested

  • Application: Synchronous Rectification, Li Battery Protect Board. Inverter


General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.


Samwin SW015R03VLT N-channel Enhanced mode TO-263 MOSFET

Samwin SW015R03VLT N-channel Enhanced mode TO-263 MOSFET

Samwin SW015R03VLT N-channel Enhanced mode TO-263 MOSFET

Samwin SW015R03VLT N-channel Enhanced mode TO-263 MOSFET

Samwin SW015R03VLT N-channel Enhanced mode TO-263 MOSFET

Samwin SW015R03VLT N-channel Enhanced mode TO-263 MOSFET

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E, GLP I-Park, No.8 Tiangu Road, Hi-tech Zone, Xi'an, Shanxi, China
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