SW015R03VLT

SW015R03VLT N-Channel Trench Mosfet

Features

High ruggedness
Low RDS(ON) (Typ 1.5mΩ)@VGS=4.5V
(Typ 1.2mΩ)@VGS=10V
Low Gate Charge (Typ 315nC)
Improved dv/dt Capability
100% Avalanche Tested
Application: Synchronous Rectification, Li Battery Protect Board. Inverter

General Description

This power MOSFET is produced with advanced technology of SAMWIN.

This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Get A Quote

Samwin SW015R03VLT N-channel Enhanced mode TO-263 MOSFET

We’re here to help. Fill out this brief form and a representative will contact you.

Related N-Channel Trench Mosfet (8v-200v)

- SW047R04VLT

- SW088R08E8T

- SW075R68ET

- SW030R03VLT

- SW065R68E7T

- SW016R03VLT

- SW025R03VT

- SW056R68E7T

- SW068R68E7T